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CEP83A3G PDF даташит

Спецификация CEP83A3G изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEP83A3G
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEP83A3G Даташит, Описание, Даташиты
CEP83A3G/CEB83A3G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 102A, RDS(ON) = 4.2 m@VGS = 10V.
RDS(ON) = 6.2 m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
ID
IDM
102
72
408
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
83
0.55
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
151
55
-55 to 175
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
Symbol
RθJC
RθJA
1
Limit
1.8
62.5
Units
C/W
C/W
Rev 2. 2011.May
http://www.cet-mos.com









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CEP83A3G Даташит, Описание, Даташиты
CEP83A3G/CEB83A3G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 40A,
VGS = 4.5V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 40A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 50A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.1mH, IAS =55A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
Min
30
1
Typ
3.2
5
2855
510
390
31
26
45
24
37
7
17
Max Units
1
100
-100
V
µA
nA
nA
3V
4.2 m
6.2 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
50 A
1.5 V
2









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CEP83A3G Даташит, Описание, Даташиты
CEP83A3G/CEB83A3G
25
VGS=10,8,6,4V
20
150
25 C
120
15 90
10
VGS=3V
5
0
0 0.2 0.4 0.6 0.8
1
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
60
30 TJ=125 C
-55 C
0
0 1.5
3 4.5
6 7.5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3600
3000
Ciss
2400
1800
1200
600
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2 ID=30A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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