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ZXMP3A17DN8TA PDF даташит

Спецификация ZXMP3A17DN8TA изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMP3A17DN8TA
Описание DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXMP3A17DN8TA Даташит, Описание, Даташиты
ZXMP3A17DN8
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Motor Drive
LCD backlighting
SO8
ORDERING INFORMATION
DEVICE
REEL TAPE
WIDTH
ZXMP3A17DN8TA 7’‘ 12mm
ZXMP3A17DN8TC 13’‘ 12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
ZXMP
3A17D
PINOUT
Top view
ISSUE 1 - OCTOBER 2005
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ZXMP3A17DN8TA Даташит, Описание, Даташиты
ZXMP3A17DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@VGS=10V; TA=25ЊC (b)(d)
@VGS=10V; TA=70ЊC (b)(d)
@VGS=10V; TA=25ЊC (a)(d)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj:Tstg
LIMIT
-30
Ϯ20
-4.4
-3.6
-3.4
-16.2
-2.5
-16.2
1.25
10
1.8
14
2.1
17
-55 to +150
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
Junction to Ambient (b)(e)
Junction to Ambient (b)(d)
Notes
RθJA 100 °C/W
RθJA 70 °C/W
RθJA 60 °C/W
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
ISSUE 1 - OCTOBER 2005
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ZXMP3A17DN8TA Даташит, Описание, Даташиты
CHARACTERISTICS
ZXMP3A17DN8
R
10
DS(on)
Limited
1 DC
100m
10m
1s
100ms
Single Pulse
T =25°C
amb
One active die
10ms
1ms
100µs
100m
1
10
-V Drain-Source Voltage (V)
DS
Safe Operating Area
110
100
T =25°C
amb
90 One active die
80
70
60 D=0.5
50
40
30 D=0.2
Single Pulse
20 D=0.05
10 D=0.1
1000µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
2.0
1.8
1.6
1.4
Two active die
1.2
1.0
0.8
0.6 One active die
0.4
0.2
0.00 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
Single Pulse
T =25°C
100
amb
One active die
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
ISSUE 1 - OCTOBER 2005
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Номер в каталогеОписаниеПроизводители
ZXMP3A17DN8TADUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors
ZXMP3A17DN8TCDUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors

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