ZXMP3F35N8 PDF даташит
Спецификация ZXMP3F35N8 изготовлена «Diodes» и имеет функцию, называемую «30V SO8 P-channel enhancement mode MOSFET». |
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Детали детали
Номер произв | ZXMP3F35N8 |
Описание | 30V SO8 P-channel enhancement mode MOSFET |
Производители | Diodes |
логотип |
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ZXMP3F35N8
30V SO8 P-channel enhancement mode MOSFET
Summary
V(BR)DSS (V)
-30
RDS(on) (Ω)
0.012 @ VGS=-10V
0.018 @ VGS=-4.5V
ID(A)
-17.1
Description
This new generation Trench MOSFET from Zetex has been designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery
protection and reverse connection applications
Features
• Low on-resistance
• Low gate drive
• SO8 package
Applications
• Power management functions
• Disconnect switches
• Reverse battery protection
Ordering information
Device
ZXMP3F35N8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
SD
SD
SD
GD
Top view
Device marking
ZXMP 3F35
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ZXMP3F35N8
Absolute maximum ratings
Parameter
Drain-Source voltage
Gate-Source voltage
(b)
Continuous Drain current @ VGS= -10V; TA=25°C
@ VGS= -10V; TA=70°C (b)
(a)
@ VGS= -10V; TA=25°C
(d)
@ VGS= -10V; TL=25°C
Pulsed Drain current (c)
Continuous Source current (Body diode) (b)
Pulsed Source current (Body diode) (c)
Power dissipation at TA =25°C (a)
Linear derating factor
(b)
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C (d)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
-30
±20
-12.3
-9.9
-9.3
-17.1
-58
-4.9
-58
1.56
12.5
2.8
22.2
5.35
42.9
-55 to 150
Unit
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient (a)
(b)
Junction to ambient
(d)
Junction to lead
Symbol
RθJA
RθJA
RθJL
Value
80
45
23.33
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
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Thermal characteristics
ZXMP3F35N8
100
R
DS(on)
Limited
10
1
100m
10m
1m
DC
1s
100ms
Single Pulse
T =25°C
amb
10ms
1ms
100µs
100m
1
10
-V Drain-Source Voltage (V)
DS
Safe Operating Area
1.6
1.4
25mm x 25mm
1.2 1oz FR4
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
80
T =25°C
70 amb
60
50
D=0.5
40
30
20 D=0.2
10
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse
T =25°C
100
amb
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
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© Diodes Incorporated 2008
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Номер в каталоге | Описание | Производители |
ZXMP3F35N8 | 30V SO8 P-channel enhancement mode MOSFET | Diodes |
ZXMP3F35N8TA | 30V SO8 P-channel enhancement mode MOSFET | Diodes |
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