DataSheet26.com

ZXMP3F37N8TA PDF даташит

Спецификация ZXMP3F37N8TA изготовлена ​​​​«Diodes» и имеет функцию, называемую «30V SO8 P-channel enhancement mode MOSFET».

Детали детали

Номер произв ZXMP3F37N8TA
Описание 30V SO8 P-channel enhancement mode MOSFET
Производители Diodes
логотип Diodes логотип 

8 Pages
scroll

No Preview Available !

ZXMP3F37N8TA Даташит, Описание, Даташиты
ZXMP3F37N8
30V SO8 P-channel enhancement mode MOSFET
Summary
V(BR)DSS (V)
-30
RDS(on) ()
0.025 @ VGS=-10V
0.041 @ VGS=-4.5V
ID(A)
-10.7
Description
This new generation Trench MOSFET from Zetex has been designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance making it ideal for high
efficiency power management applications.
Features
Low on-resistance
Fast switching speed
Low gate drive
SO8 package
Applications
DC-DC Converters
Power management functions
Disconnect switches
Motor control
Ordering information
Device
ZXMP3F37N8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
S
S
S
G
D
D
D
D
Device marking
ZXMP 3F37
Issue 1 - August 2008
1
www.zetex.com
© Diodes Incorporated 2008
www.diodes.com









No Preview Available !

ZXMP3F37N8TA Даташит, Описание, Даташиты
ZXMP3F37N8
Absolute maximum ratings
Parameter
Drain-Source voltage
Gate-Source voltage
(b)
Continuous Drain current @ VGS= -10V; TA=25°C
@ VGS= -10V; TA=70°C (b)
(a)
@ VGS= -10V; TA=25°C
(d)
@ VGS= -10V; TL=25°C
Pulsed Drain current (c)
Continuous Source current (Body diode) (b)
Pulsed Source current (Body diode) (c)
Power dissipation at TA =25°C (a)
Linear derating factor
(b)
Power dissipation at TA =25°C
Linear derating factor
Power dissipation at TL =25°C (d)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
-30
±20
-8.5
-6.8
-6.4
-10.7
-39.5
-4.4
-39.5
1.56
12.5
2.8
22.2
4.4
35.4
-55 to 150
Unit
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient (a)
(b)
Junction to ambient
(d)
Junction to lead
Symbol
RθJA
RθJA
RθJL
Value
80
45
28.26
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 - August 2008
2
www.zetex.com
© Diodes Incorporated 2008
www.diodes.com









No Preview Available !

ZXMP3F37N8TA Даташит, Описание, Даташиты
Thermal characteristics
ZXMP3F37N8
100
R
DS(on)
10 Limited
1
100m
10m
1m
DC
1s
100ms
Single Pulse
T =25°C
amb
10ms
1ms
100µs
100m
1
10
-V Drain-Source Voltage (V)
DS
Safe Operating Area
1.6
1.4 25mm x 25mm
1.2 1oz FR4
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
80
T =25°C
70 amb
60
50
D=0.5
40
30
20 D=0.2
10
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse
T =25°C
100
amb
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
Issue 1 - August 2008
3
www.zetex.com
© Diodes Incorporated 2008
www.diodes.com










Скачать PDF:

[ ZXMP3F37N8TA.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
ZXMP3F37N8TA30V SO8 P-channel enhancement mode MOSFETDiodes
Diodes

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск