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ZXMP4A57E6TA PDF даташит

Спецификация ZXMP4A57E6TA изготовлена ​​​​«Diodes» и имеет функцию, называемую «40V P-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMP4A57E6TA
Описание 40V P-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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ZXMP4A57E6TA Даташит, Описание, Даташиты
Product Summary
V(BR)DSS
-40V
RDS(ON) max
80mΩ @ VGS= -10V
150mΩ @ VGS= -4.5V
ID max
TA = +25°C
-3.7 A
-2.8 A
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Applications
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
ZXMP4A57E6
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight 0.018 grams (Approximate)
SOT26
D
G
Top View
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information (Notes 4 & 5)
Part Number
ZXMP4A57E6TA
ZXMP4A57E6QTA
Compliance
Standard
Automotive
Case
SOT26
SOT26
Quantity per reel
3,000
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
4A57
4A57 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
2015
C
2016
D
Month
Code
Jan Feb
12
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
Mar
3
2017
E
2018
F
2019
G
2020
H
Apr May Jun
456
Jul Aug Sep
78
9
1 of 8
www.diodes.com
2021
I
2022
J
Oct Nov Dec
OND
February 2015
© Diodes Incorporated









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ZXMP4A57E6TA Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current VGS = 10V
Pulsed Drain Current
VGS = 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 7)
TA = +70°C (Note 7)
(Note 6)
(Note 8)
(Note 7)
(Note 8)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
ZXMP4A57E6
Value
-40
20
-3.7
-2.9
-2.9
-18
-2.6
-18
Unit
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
(Note 6)
(Note 7)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 7)
Symbol
PD
RθJA
TJ, TSTG
Value
1.1
8.8
1.7
13.7
113
73
-55 to +150
Unit
W
mW/°C
°C/W
°C
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note 4, except the device is measured at t 5 seconds.
8. Same as Note 4, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
2 of 8
www.diodes.com
February 2015
© Diodes Incorporated









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ZXMP4A57E6TA Даташит, Описание, Даташиты
Thermal Characteristics
ZXMP4A57E6
R
DS(ON)
10 Limited
1
DC
1s
100m
100ms
10ms
1ms
10m
Single Pulse, T =25°C
amb
100us
1 10
-V Drain-Source Voltage (V)
DS
P-channel Safe Operating Area
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
100
80
D=0.5
60
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1
10
Pulse Width (s)
100
Transient Thermal Impedance
1k
100 Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
3 of 8
www.diodes.com
February 2015
© Diodes Incorporated










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Номер в каталогеОписаниеПроизводители
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