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ZXMS6004SGQTA PDF даташит

Спецификация ZXMS6004SGQTA изготовлена ​​​​«Diodes» и имеет функцию, называемую «60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMS6004SGQTA
Описание 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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ZXMS6004SGQTA Даташит, Описание, Даташиты
ZXMS6004SGQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
Continuous Drain Source Voltage VDS= 60V
On-State Resistance
500m
Nominal Load Current (VIN = 5V) 1.3A
Clamping Energy
480mJ
Description
The ZXMS6004SGQ is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6004SGQ is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Applications
Especially suited for loads with a high in-rush current such as
lamps and motors
All types of resistive, inductive and capacitive loads in switching
applications
μC compatible power switch for 12V and 24V DC applications
Automotive rated
Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is
designed to de-activate at low VDS to minimise on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product’s ability to self- protect at low VDS.
Features and Benefits
Compact High Power Dissipation Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
SOT-223
Top View
Top view
Pin Out
Ordering Information
Notes:
Product
ZXMS6004SGQTA
Marking
ZXMS6004S
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
3,000 units
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMS
6004S
ZXMS6004S = Product type Marking Code
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004SGQ
Document number: DS33610 Rev. 1 - 2
1 of 8
www.diodes.com
April 2014
© Diodes Incorporated









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ZXMS6004SGQTA Даташит, Описание, Даташиты
Functional Block Diagram
ZXMS6004SGQ
Absolute Maximum Ratings (@Tamb = +25°C, unless otherwise stated.)
Characteristic
Continuous Drain-Source Voltage
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @-0.2V VIN 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
Pulsed Drain Current @VIN = 3.3V
Pulsed Drain Current @VIN = 5V
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
Symbol
VDS
VDS(SC)
VIN
IIN
IDM
IDM
IS
ISM
EAS
VESD
VCDM
Value
60
36
-0.5 ... +6
No limit
IIN 2
2
2.5
1
5
480
4000
1000
Units
V
V
V
mA
A
A
A
A
mJ
V
V
Thermal Characteristics (@Tamb = +25°C, unless otherwise stated.)
Characteristic
Power Dissipation at Tamb = +25°C (Note 6)
Linear Derating Factor
Power Dissipation at Tamb = +25°C (Note 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating Temperature Range
Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
RθJC
TJ’
TSTG
Value
1.0
8.0
1.6
12.8
125
83
39
-40 to +150
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
°C
Note:
6. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
7. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
8. Thermal resistance between junction and the mounting surfaces of drain and source pins.
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004SGQ
Document number: DS33610 Rev. 1 - 2
2 of 8
www.diodes.com
April 2014
© Diodes Incorporated









No Preview Available !

ZXMS6004SGQTA Даташит, Описание, Даташиты
Recommended Operating Conditions
The ZXMS6004SGQ is optimized for use with μC operating from 3.3V and 5V supplies.
Characteristic
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
Symbol
VIN
TA
VIH
VIL
VP
Thermal Characteristics
ZXMS6004SGQ
Min Max Unit
0 5.5 V
-40 +125 °C
3 5.5 V
0 0.7 V
0 36 V
10 Limited
by RDS(on)
Limited by Over-Current Protection
1ms
1
DC 1s
100m
10m
Single Pulse
Tamb=25°C
See Note (a)
100ms
10ms
Limit of s/c protection
1 10
VDS Drain-Source Voltage (V)
Safe Operating Area
1.6
1.4
1.2 See Note (b)
1.0
0.8
0.6
0.4
0.2
0.0
0
See Note (a)
(°C)
25 50 75 100 125 150
Temperature (°C)
Derating Curve
120 Tamb=25°C
100 See Note (a)
80
D=0.5
60
40 D=0.2
20
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100 Single Pulse
Tamb=25°C
See Note (a)
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004SGQ
Document number: DS33610 Rev. 1 - 2
3 of 8
www.diodes.com
April 2014
© Diodes Incorporated










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