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Número de pieza | ZXMS6006DGQ | |
Descripción | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ZXMS6006DGQ (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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ZXMS6006DGQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
• Continuos Drain Source Voltage 60V
• On-State Resistance
100mΩ
• Nominal Load Current (VIN = 5V) 2.8A
• Clamping Energy
490mJ
Description and Applications
The ZXMS6006DGQ is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6006DGQ is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
• Lamp Driver
• Motor Driver
• Relay Driver
• Solenoid Driver
Features and Benefits
• Compact High Power Dissipation Package
• Low Input Current
• Logic Level Input (3.3V and 5V)
• Short Circuit Protection with Auto Restart
• Over Voltage Protection (active clamp)
• Thermal Shutdown with Auto Restart
• Over-Current Protection
• Input Protection (ESD)
• High Continuous Current Rating
• Lead-Free Finish; RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (approximate)
SOT223
Top View
D
IN
S
Device Symbol
S
DD
IN
Top View
Pin Out
Ordering Information (Note 3)
Product
ZXMS6006DGQTA
Marking
ZXMS6006D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
ZXMS
6006D
ZXMS6006D = Product type Marking Code
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
1 of 8
Document number: DS35142 Rev. 1 - 2
www.diodes.com
June 2014
© Diodes Incorporated
1 page Typical Characteristics
ZXMS6006DGQ
16
14
VIN
5V
12 4.5V
10
4V
3.5V
8 3V3V
6 2.5V
4
2V
2 TA = 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VDS Drain-Source Voltage (V)
Typical Output Characteristic
0.20
0.15
0.10
ID = 1A
TJ = 150°C
0.05
TJ = 25°C
0.00
2.0 2.5 3.0 3.5 4.0 4.5
VIN Input Voltage (V)
On-Resistance vs Input Voltage
5.0
0.20
0.15
0.10
0.05
VIN = 3V
VIN = 5V
120
100
80
60
40
20
0
01234
VIN Input Voltage (V)
Input Current vs Input Voltage
5
1.4
1.3 VIN = VDS
1.2 ID = 1mA
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ Junction Temperature (°C)
Threshold Voltage vs Temperature
10
TJ=150°C
1
TJ=25°C
0.1
0.00-50 -25 0 25 50 75 100 125 150
TJ Junction Temperature (°C)
On-Resistance vs Temperature
0.01
0.4 0.6 0.8
VSD Source-Drain Voltage (V)
Reverse Diode Characteristic
1.0
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DGQ
5 of 8
Document number: DS35142 Rev. 1 - 2
www.diodes.com
June 2014
© Diodes Incorporated
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet ZXMS6006DGQ.PDF ] |
Número de pieza | Descripción | Fabricantes |
ZXMS6006DGQ | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET | Diodes |
ZXMS6006DGQTA | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET | Diodes |
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