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ZXMS6006SGQ PDF даташит

Спецификация ZXMS6006SGQ изготовлена ​​​​«Diodes» и имеет функцию, называемую «60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMS6006SGQ
Описание 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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ZXMS6006SGQ Даташит, Описание, Даташиты
ZXMS6006SGQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
Continuos Drain Source Voltage 60V
On-State Resistance
100mΩ
Nominal Load Current (VIN = 5V) 2.8A
Clamping Energy
480mJ
Description and Applications
The ZXMS6006SGQ is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6006SGQ is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
SOT223
Features and Benefits
Compact High Power Dissipation Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (active clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
D
IN
Top View
S
Device Symbol
Top View
Pin Out
Ordering Information (Note 4)
Product
ZXMS6006SGQTA
Marking
ZXMS6006S
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
ZXMS
6006S
ZXMS6006S = Product type Marking Code
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006SGQ
1 of 8
Document number: DS35141 Rev. 2 - 2
www.diodes.com
June 2014
© Diodes Incorporated









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ZXMS6006SGQ Даташит, Описание, Даташиты
Functional Block Diagram
ZXMS6006SGQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Continuous Drain-Source Voltage
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @-0.2V VIN 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
Pulsed Drain Current @VIN = 3.3V
Pulsed Drain Current @VIN = 5V
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
Symbol
VDS
VDS(SC)
VIN
IIN
IDM
IDM
IS
ISM
EAS
VESD
VCDM
Value
60
16
-0.5 to +6.0
No Limit
IIN │≤2
11
13
2
12
480
4000
1000
Units
V
V
V
mA
A
A
A
A
mJ
V
V
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor
Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating Temperature Range
Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
RθJC
TJ
TSTG
Value
1.0
8.0
1.6
12.8
125
83
39
-40 to +150
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
°C
Notes:
5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006SGQ
2 of 8
Document number: DS35141 Rev. 2 - 2
www.diodes.com
June 2014
© Diodes Incorporated









No Preview Available !

ZXMS6006SGQ Даташит, Описание, Даташиты
Recommended Operating Conditions
The ZXMS6006SGQ is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low Level Input Voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
Symbol
VIN
TA
VIH
VIL
VP
Min
0
-40
3
0
0
ZXMS6006SGQ
Max
5.5
+125
5.5
0.7
16
Unit
V
°C
V
V
V
Thermal Characteristics
Limited
10 by RDS(on)
Limited by Over-Current Protection
1ms
1
100m
DC 1s
Single Pulse
Tamb=25°C
100ms
10ms
15X15X1.6 mm
10m Single 1oz FR4
Limit of s/c protection
1 10
VDS Drain-Source Voltage (V)
Safe Operating Area
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
50X50X1.6 mm
Single 2oz FR4
15X15X1.6 mm
Single 1oz FR4
25 50 75 100 125 150
Temperature (°C)
Derating Curve
120 15X15X1.6 mm
Single 1oz FR4
100 Tamb=25°C
80
D=0.5
60
40 D=0.2
20
0
100µ 1m
10m 100m
Single Pulse
D=0.05
D=0.1
1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100 15X15X1.6 mm
Single 1oz FR4
Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006SGQ
3 of 8
Document number: DS35141 Rev. 2 - 2
www.diodes.com
June 2014
© Diodes Incorporated










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