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PDF GP30B60KD-E Data sheet ( Hoja de datos )
| Número de pieza | GP30B60KD-E | |
| Descripción | IRGP30B60KD-E | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 94388B
IRGP30B60KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-247AD Package
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 30A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.95V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AD
Max.
600
60
30
120
120
60
30
120
±20
304
122
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0
Max.
0.41
1.32
–––
40
–––
Units
°C/W
g
1
02/27/06
1 page  
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 15A
ICE = 30A
ICE = 60A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
IRGP30B60KD-E
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 15A
ICE = 30A
ICE = 60A
10 15
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 15A
ICE = 30A
ICE = 60A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
250
TJ = 25°C
200 TJ = 150°C
150
100
50 TJ = 150°C
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
700 35
600
90% ICE
500 tf
400
30
25
20
300
5% VCE
200
5% ICE
100
15
10
5
0
-100
-0.20 0.00
Eof f Loss
0.20 0.40
Time(µs)
0.60
0
-5
0.80
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
100 40
0
-100
-200
QRR
tRR
30
20
10
-300
0
-400
-500
-600
Peak
IRR
10%
Peak
IRR
-10
-20
-30
-700
-40
-0.25
-0.05
0.15
0.35
time (µS)
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
www.irf.com
IRGP30B60KD-E
700 70
600 60
500 50
TEST CURRENT
400 40
300
200 tr
100
90% test current
10% test current
5% VCE
30
20
10
0
Eon Loss
0
-100 -10
15.90 16.00 16.10 16.20 16.30
Time (µs)
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
600 300
500 250
400 ICE
VCE
300
200
150
200 100
100 50
00
-5.00 0.00 5.00 10.00 15.00
time (µS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet GP30B60KD-E.PDF ] | |
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