DataSheet26.com

CEP01N65 PDF даташит

Спецификация CEP01N65 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEP01N65
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

4 Pages
scroll

No Preview Available !

CEP01N65 Даташит, Описание, Даташиты
CEP01N65/CEB01N65
CEF01N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP01N65
CEB01N65
CEF01N65
VDSS
650V
650V
650V
RDS(ON)
10.5Ω
10.5Ω
10.5Ω
ID
1.3A
1.3A
1.3A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
650
±30
1.3
5.2
41
0.33
1.3 d
5.2 d
27
0.22
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
62.5
4.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.March
http://www.cet-mos.com









No Preview Available !

CEP01N65 Даташит, Описание, Даташиты
CEP01N65/CEB01N65
CEF01N65
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.6A
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 0.6A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 1.3A,
VGS = 10V, RGEN =4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 1.3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.6A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 1A .
g.Full package VSD test condition IS = 1A .
Min
650
2.5
Typ
8.5
0.8
205
45
20
14.3
14.6
22.9
16.6
5.7
1.9
2.4
Max Units
V
25 µA
10 uA
-10 uA
4.5 V
10.5
S
pF
pF
pF
28.6
29.2
45.8
33.2
7.5
ns
ns
ns
ns
nC
nC
nC
1.3 A
1.5 V
4
2









No Preview Available !

CEP01N65 Даташит, Описание, Даташиты
CEP01N65/CEB01N65
CEF01N65
1.2
1.0 VGS=10,8,7V
0.8 VGS=5V
0.6
0.4
0.2 VGS=4V
0
0.0 4
8 12
16 20 24
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2.4
2.0
1.6
1.2
0.8
25 C
0.4 TJ=125 C
-55 C
0
1234567
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
300
250
Ciss
200
150
100
50 Coss
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0 ID=0.6A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
100
10-1
10-2
0.2 0.6 1.0 1.4 1.8 2.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










Скачать PDF:

[ CEP01N65.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
CEP01N6N-Channel Enhancement Mode Field Effect TransistorCET
CET
CEP01N65N-Channel Enhancement Mode Field Effect TransistorCET
CET
CEP01N6GN-Channel Enhancement Mode Field Effect TransistorCET
CET

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск