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CEF04N7G PDF даташит

Спецификация CEF04N7G изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEF04N7G
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEF04N7G Даташит, Описание, Даташиты
CEP04N7G/CEB04N7G
CEF04N7G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP04N7G
CEB04N7G
CEF04N7G
VDSS
700V
700V
700V
RDS(ON)
3.3Ω
3.3Ω
3.3Ω
ID
4A
4A
4A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
700
±30
4
16
84
0.67
4d
16 d
35
0.28
Single Pulsed Avalanche Energy f
EAS 43
Single Pulsed Avalanche Current f
IAS 3.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
62.5
3.6
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2009.July
http://www.cet-mos.com









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CEF04N7G Даташит, Описание, Даташиты
CEP04N7G/CEB04N7G
CEF04N7G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 4A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 4A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 2.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.L = 7mH, IAS =3.5A, VDD = 50V, RG = 25, Starting TJ = 25 C
Min
700
2
Typ
2.5
595
80
20
18
17
40.5
19
14
3
6
Max Units
25
100
-100
V
µA
nA
nA
4V
3.3
pF
pF
pF
36 ns
34 ns
81 ns
38 ns
18.2 nC
nC
nC
2.5 A
1.5 V
2









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CEF04N7G Даташит, Описание, Даташиты
CEP04N7G/CEB04N7G
CEF04N7G
6
VGS=10,8,7V
5
4
3
2
VGS=4V
1
0
0.0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
9
7.5
6
4.5
3
1.5
0
1
25 C
TJ=125C
234
-55 C
5
6
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1200
1000
800
600 Ciss
400
200
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0 ID=2A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.7 1.0 1.3 1.7 2.0
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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Номер в каталогеОписаниеПроизводители
CEF04N7N-Channel Enhancement Mode Field Effect TransistorCET
CET
CEF04N7GN-Channel Enhancement Mode Field Effect TransistorCET
CET

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