CEB02N9 PDF даташит
Спецификация CEB02N9 изготовлена «CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | CEB02N9 |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | CET |
логотип |
4 Pages
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CEP02N9/CEB02N9
CEF02N9
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP02N9
CEB02N9
CEF02N9
VDSS
900V
900V
900V
RDS(ON)
6.8Ω
6.8Ω
6.8Ω
ID
2.6A
2.6A
2.6A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
VDS 900
VGS ±30
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
ID
IDM e
PD
2.6
1.9
10.4
125
0.83
2.6 d
1.9 d
10.4 d
47
0.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.2
62.5
3.2
62.5
Units
V
V
A
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.May
http://www.cet-mos.com
No Preview Available ! |
CEP02N9/CEB02N9
CEF02N9
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 900V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
900
25
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1.3A
2
4
5.3 6.8
V
Ω
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
690
70
pF
pF
Crss 15 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 450V, ID = 2.2A,
VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 720V, ID = 2.2A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
20 40 ns
34 68 ns
44 88 ns
28 56 ns
16 20 nC
3 nC
7 nC
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 2A
2A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
2
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CEP02N9/CEB02N9
CEF02N9
2.4
2.0
VGS=10,9,8,6V
1.6
1.2
0.8
VGS=5V
0.4
0
0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
4.2
3.5
2.8
2.1
1.4
0.7
0
0
25 C
TJ=125C
24
-55 C
68
10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
900
750 Ciss
600
450
300
150
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0 ID=1.3A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
101 VGS=0V
100
10-1
0.4
0.6
0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
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