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CEM9407A PDF даташит

Спецификация CEM9407A изготовлена ​​​​«CET» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEM9407A
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEM9407A Даташит, Описание, Даташиты
CEM9407A
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -3.7A, RDS(ON) = 125m@VGS = -10V.
RDS(ON) = 165m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
5
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -3.7
IDM -14.8
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
1
Rev 4. 2010.Mar.
http://www.cet-mos.com









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CEM9407A Даташит, Описание, Даташиты
CEM9407A
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -48V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -3.7A
VGS = -4.5V, ID = -3.1A
VDS = -5V, ID = -3.7A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30V, ID = -3.7A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-60
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
100 125 m
130 165 m
7S
615 pF
140 pF
45 pF
11 22 ns
4.5 9 ns
50 100 ns
15 30 ns
17 22 nC
2 nC
4 nC
-1.3 A
-1.2 V
2









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CEM9407A Даташит, Описание, Даташиты
15
-VGS=10,6,5,4.5,4V
12
-VGS=3.5V
9
6 -VGS=3.0V
3
0
012345
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
800
Ciss
600
400
200 Coss
Crss
0
0 6 12 18 24 30
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEM9407A
15
12
25 C
9
6
5
3
TJ=125 C
0
012
-55 C
34
5
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-3.7A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current










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