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CEH2288 PDF даташит

Спецификация CEH2288 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEH2288
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEH2288 Даташит, Описание, Даташиты
CEH2288
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , RDS(ON) = 23m@VGS = 4.5V.
RDS(ON) = 30m@VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G1(6)
D1(2)
G2(4)
S1(1)
D2(5)
S2(3)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 5.2
IDM 20
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
110
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 3. 2013.April
http://www.cetsemi.com









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CEH2288 Даташит, Описание, Даташиты
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 3.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 5.2A,
VGS = 5V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 5.2A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 5.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
CEH2288
Min Typ Max Units
20 V
1 µA
100 nA
-100 nA
0.4 1.0 V
17 23 m
21 30 m
760 pF
120 pF
85 pF
20 ns
19 ns
42 ns
9 ns
10 nC
1.5 nC
3 nC
5.2 A
1.2 V
2









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CEH2288 Даташит, Описание, Даташиты
5
VGS=4.5,3.5,2.5V
VGS=2.0V
4
3
2
1
VGS=1.5V
0
0 0.3 0.6 0.9
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
1000
750
Ciss
500
250
0 Crss
Coss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEH2288
10
25 C
8
6
4
2 TJ=125 C
-55 C
0
0 0.5 1.0 1.5 2.0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1.8 ID=5.2
1.6 VGS=4.5V
1.4
1.2
1.0
0.8
0.6
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current










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