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CEP4301 PDF даташит

Спецификация CEP4301 изготовлена ​​​​«CET» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEP4301
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEP4301 Даташит, Описание, Даташиты
CEP4301/CEB4301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -25A, RDS(ON) =42m@VGS = -10V.
RDS(ON) =65m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
VDS
VGS
ID
IDM
-40
±20
-25
-17
-100
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
39
0.31
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.2
62.5
Units
V
V
A
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2012.Apr
http://www.cetsemi.com









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CEP4301 Даташит, Описание, Даташиты
CEP4301/CEB4301
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -12A
VGS = -4.5V, ID = -6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -20V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -20V, ID = -5A,
VGS = -10V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -20V, ID = -5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -25A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-40
-1
Typ
30
48
1125
150
100
12
5
33
4
20
2.5
3.5
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
42 m
65 m
pF
pF
pF
24 ns
10 ns
66 ns
8 ns
26 nC
nC
nC
-25 A
-1.3 V
2









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CEP4301 Даташит, Описание, Даташиты
25
-VGS=10,8,4V
20
CEP4301/CEB4301
50
25 C
40
15 30
10 20
5
-VGS=3V
TJ=125 C
10
-55 C
0
0123456
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
0
0123456
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1200
1000
Ciss
800
600
400
200 Coss
0 Crss
0 5 10 15 20 25
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2 ID=-12A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5 - 69










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Номер в каталогеОписаниеПроизводители
CEP4301P-Channel Enhancement Mode Field Effect TransistorCET
CET

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