CES2301 PDF даташит
Спецификация CES2301 изготовлена «CET» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | CES2301 |
Описание | P-Channel Enhancement Mode Field Effect Transistor |
Производители | CET |
логотип |
4 Pages
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CES2301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V.
RDS(ON) = 150mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D
DS
G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -20
VGS ±8
Drain Current-Continuous
Drain Current-Pulsed a
ID -2.8
IDM -10
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 4. 2010.Aug.
http://www.cet-mos.com
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CES2301
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Symbol
Test Condition
Min Typ Max Units
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 8V, VDS = 0V
VGS = -8V, VDS = 0V
-20
-1
100
-100
V
µA
nA
nA
VGS = VDS, ID = -250µA -0.45
-1 V
VGS = -4.5V, ID = -2.8A
80 100 mΩ
VGS = -2.5V, ID = -2.0A
110 150 mΩ
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
Ciss
Coss
Crss
VDS = -5V, ID = -2.8A
VDS = -10V, VGS= 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -10V,ID = -2.8A,
VGS = -4.5V, RGEN = 3Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -10V, ID = -2.8A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -0.75A
9S
405 pF
90 pF
60 pF
11 22 ns
8 16 ns
37 74 ns
23 46 ns
4.5 6 nC
1.2 nC
1 nC
-2.8 A
-1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
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10
-VGS=4.5,3.5,2.5V
8
6
4
2 -VGS=1.5V
0
0.0 0.5
1 1.5
2 2.5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
600
500
Ciss
400
300
200
100
Crss
Coss
0
02
4
6
8 10
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CES2301
5
25 C
4
3
2
1
TJ=125 C
-55 C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-2.8A
1.9 VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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