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ZXMN3A04K PDF даташит

Спецификация ZXMN3A04K изготовлена ​​​​«Diodes» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMN3A04K
Описание N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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ZXMN3A04K Даташит, Описание, Даташиты
Green ZXMN3A04K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON)
20mΩ @ VGS = 10V
30mΩ @ VGS = 4.5V
ID
TA = +25°C
18.4A
15.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Backlighting
DC-DC Converters
Power Management Functions
Features
Low RDS(ON) Ensures on State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.33 grams (approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
ZXMN3A04KTC
Case
TO252
Packaging
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMN
3A04
YYWW
ZXMN3A04 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
ZXMN3A04K
Document number: DS33534 Rev. 2 - 2
1 of 7
www.diodes.com
October 2014
© Diodes Incorporated









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ZXMN3A04K Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current VGS = 10V
Steady
State
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 7)
TA = +25°C (Note 5)
TA = +70°C (Note 5)
TA = +25°C (Note 6)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
ZXMN3A04K
Value
30
±20
18.4
14.7
12.0
66
11.5
66
Unit
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor
Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor
Power Dissipation at TA = +25°C (Note 8)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 8)
Operating and Storage Temperature Range
Symbol
PD
PD
PD
RθJA
RθJA
RθJA
TJ, TSTG
Value
4.3
34.4
10.1
80.8
2.15
17.2
29
12.3
58
-55 to +150
Units
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Diode Forward Voltage (Note 9)
Forward Transconductance (Notes 9 & 11)
DYNAMIC CHARACTERISTICS (Notes 10 & 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
IDSS
IGSS
30
——
0.5
±100
VGS(th)
RDS(ON)
1.0
20
30
VSD 0.85 0.95
gfs 22.1
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1890
349
218
19.9
36.8
5.8
7.1
5.2
6.1
38.1
20.2
18.4
11
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250mA
mΩ VGS = 10V, ID = 12A
VGS = 4.5V, ID = 9.8A
V TJ = +25°C, IS = 6.8A,
VGS = 0V
S VDS = 15V, ID = 12.6A
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
nC VDS = 15V, ID = 6.5A
ns
VDS = 15V, VGS = 10V,
ID = 1A, RGEN = 6Ω
ns
nC IS = 2.3A, di/dt = 100A/µs
Notes:
5. For a device surface mounted on FR4 PCB measured at 10 sec.
6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300μs - pulse width limited by maximum junction temperature.
8. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
9. Measured under pulsed conditions. Pulse width 300μs; duty cycle 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
ZXMN3A04K
Document number: DS33534 Rev. 2 - 2
2 of 7
www.diodes.com
October 2014
© Diodes Incorporated









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ZXMN3A04K Даташит, Описание, Даташиты
ZXMN3A04K
Figure 1. Safe Operating Area
Figure 2. Safe Operating Area
Figure 3. Transient Thermal Impedance
Figure 4. Transient Thermal Impedance
Figure 5. Pulse Power Dissipation
ZXMN3A04K
Document number: DS33534 Rev. 2 - 2
3 of 7
www.diodes.com
Figure 6. Derating Curve
October 2014
© Diodes Incorporated










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