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PDF ZXMN3A04KTC Data sheet ( Hoja de datos )
| Número de pieza | ZXMN3A04KTC | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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Green ZXMN3A04K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON)
20mΩ @ VGS = 10V
30mΩ @ VGS = 4.5V
ID
TA = +25°C
18.4A
15.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Backlighting
DC-DC Converters
Power Management Functions
Features
Low RDS(ON) – Ensures on State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.33 grams (approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
ZXMN3A04KTC
Case
TO252
Packaging
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMN
3A04
YYWW
ZXMN3A04 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
ZXMN3A04K
Document number: DS33534 Rev. 2 - 2
1 of 7
www.diodes.com
October 2014
© Diodes Incorporated
1 page  
ZXMN3A04K
Figure 13. Capacitance vs. Drain-Source Voltage
Figure 14. Gate-Source Voltage vs. Gate Charge
ZXMN3A04K
Document number: DS33534 Rev. 2 - 2
5 of 7
www.diodes.com
October 2014
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXMN3A04KTC.PDF ] | |
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