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ZXMN3F30FHTA PDF даташит

Спецификация ZXMN3F30FHTA изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «30V SOT23 N-channel enhancement mode MOSFET».

Детали детали

Номер произв ZXMN3F30FHTA
Описание 30V SOT23 N-channel enhancement mode MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXMN3F30FHTA Даташит, Описание, Даташиты
ZXMN3F30FH
30V SOT23 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
30
RDS(on) (Ω)
0.047 @ VGS= 10V
0.065 @ VGS= 4.5V
ID (A)
4.6
4.0
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
• Low on-resistance
• 4.5V gate drive capability
• SOT23
Applications
• DC-DC Converters
• Power management functions
• Motor Control
D
G
S
Ordering information
DEVICE
ZXMN3F30FHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
D
S
Device marking
KNA
G
Top view
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com









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ZXMN3F30FHTA Даташит, Описание, Даташиты
ZXMN3F30FH
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ VGS=4.5; TA=25°C(b)
@ VGS=4.5; TA=70°C(b)
@ VGS=4.5; TA=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at TA =25°C(a)
Linear derating factor
Power dissipation at TA =25°C(b)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj, Tstg
Limit
30
±20
4.6
3.7
3.8
21
2.2
21
0.95
7.6
1.4
11.2
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to lead(d)
Symbol
RJA
RJA
RJL
Limit
131
89
68
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com









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ZXMN3F30FHTA Даташит, Описание, Даташиты
Thermal characteristics
ZXMN3F30FH
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com










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Номер в каталогеОписаниеПроизводители
ZXMN3F30FHTA30V SOT23 N-channel enhancement mode MOSFETZetex Semiconductors
Zetex Semiconductors

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