ZXMN3G32DN8 PDF даташит
Спецификация ZXMN3G32DN8 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «30V SO8 dual N-channel enhancement mode MOSFET». |
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Детали детали
Номер произв | ZXMN3G32DN8 |
Описание | 30V SO8 dual N-channel enhancement mode MOSFET |
Производители | Zetex Semiconductors |
логотип |
8 Pages
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ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS
30
RDS(on) (Ω)
0.028 @ VGS= 10V
0.045 @ VGS= 4.5V
ID (A)
7.1
5.6
Description
This new generation Trench MOSFET from Zetex features low on-
resistance and fast switching speed.
Features
• Low on-resistance
• 4.5V gate drive capability
• Fast switching bullet
D1
G1
Applications
• DC-DC Converters
• Power management functions
• Motor Control
• Backlighting
Ordering information
DEVICE
ZXMN3G32DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
S1
S1
G1
S2
G2
Device marking
ZXMN
3G32D
G2
D2
S2
D1
D1
D2
D2
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
No Preview Available ! |
ZXMN3G32DN8
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ VGS=10; TA=25°C(b)
@ VGS=10; TA=70°C(b)
@ VGS=10; TA=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at TA =25°C(a)(d)
Linear derating factor
Power dissipation at TA =25°C(a)(e)
Linear derating factor
Power dissipation at TA =25°C(b)(d)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
30
±20
7.1
5.7
5.5
33.6
3.1
33.6
1.25
10
1.8
14
2.1
17
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)(d)
Junction to ambient(a)(e)
Junction to ambient(b)(d)
Junction to lead(f)
Symbol
R⍜JA
R⍜JA
R⍜JA
R⍜JL
Limit
100
70
60
51
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
No Preview Available ! |
Thermal characteristics
ZXMN3G32DN8
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
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Номер в каталоге | Описание | Производители |
ZXMN3G32DN8 | 30V SO8 dual N-channel enhancement mode MOSFET | Zetex Semiconductors |
ZXMN3G32DN8TA | 30V SO8 dual N-channel enhancement mode MOSFET | Zetex Semiconductors |
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