ZXMN6A25N8TA PDF даташит
Спецификация ZXMN6A25N8TA изготовлена «Zetex Semiconductors» и имеет функцию, называемую «60V SO8 N-channel enhancement mode MOSFET». |
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Детали детали
Номер произв | ZXMN6A25N8TA |
Описание | 60V SO8 N-channel enhancement mode MOSFET |
Производители | Zetex Semiconductors |
логотип |
8 Pages
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ZXMN6A25N8
60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
60
RDS(on) (Ω)
0.050 @ VGS=10V
0.070 @ VGS=4.5V
ID(A)
7.0
Description
This new generation Trench MOSFET from
Zetex features low on-resistance and fast switching,
making it ideal for high efficiency power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low gate drive
• SO8 package
Applications
• DC-DC Converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device
ZXMN6A25N8TA
Reel size
(inches)
7
Device marking
ZXMN6A25
Tape width
(mm)
12
Quantity
per reel
500
D
G
S
SD
SD
SD
GD
Top view
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
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ZXMN6A25N8
Absolute maximum ratings
Parameter
Drain-Source voltage
Gate-Source voltage
Continuous Drain current @ VGS= 10V; TA=25°C (b)
@ VGS= 10V; TA=70°C (b)
@ VGS= 10V; TA=25°C (a)
@ VGS= 10V; TL=25°C (a)(d)
Pulsed Drain current (c)
Continuous Source current (Body diode) (b)
Pulsed Source current (Body diode) (c)
Power dissipation at TA =25°C (a)
Linear derating factor
Power dissipation at TA =25°C (b)
Linear derating factor
Power dissipation at TL =25°C (d)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
60
± 20
5.7
4.5
4.3
7.0
25.7
4.1
25.7
1.56
12.5
2.8
22.2
4.14
33.1
-55 to 150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient (a)
Junction to ambient (b)
Junction to lead (d)
Symbol
RθJA
RθJA
RθJL
Value
80
45
30.2
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
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Thermal characteristics
ZXMN6A25N8
10
RDS(on)
Limited
1
100m
10m
1m
DC
1s
100ms
Single Pulse
Tamb=25°C
10ms
1ms
100µs
100m
1
10
VDS Drain-Source Voltage (V)
Safe Operating Area
1.6
1.4 25mm x 25mm
1.2 1oz FR4
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
80
70 Tamb=25°C
60
50 D=0.5
40
30
20 D=0.2
10
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse
100 Tamb=25°C
10
1
100µ 1m 10m 100m 1
10 100
Pulse Width (s)
Pulse Power Dissipation
1k
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
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ZXMN6A25N8TA | 60V SO8 N-channel enhancement mode MOSFET | Zetex Semiconductors |
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