ZXMN2F30FH PDF даташит
Спецификация ZXMN2F30FH изготовлена «Zetex Semiconductors» и имеет функцию, называемую «20V SOT23 N-channel enhancement mode MOSFET». |
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Детали детали
Номер произв | ZXMN2F30FH |
Описание | 20V SOT23 N-channel enhancement mode MOSFET |
Производители | Zetex Semiconductors |
логотип |
8 Pages
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ZXMN2F30FH
20V SOT23 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
20
RDS(on) (Ω)
0.045 @ VGS= 4.5V
0.065 @ VGS= 2.5V
ID (A)
4.9
4.1
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with low (2.5V) gate drive.
Features
• Low on-resistance
• 2.5V gate drive capability
• SOT23 package
Applications
• Buck/Boost DC-DC Converters
• Load switching and SMPS
• Charging applications in portable equipment
• Motor Control
• LED Lighting
D
G
S
Ordering information
DEVICE
ZXMN2F30FHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
D
S
Device marking
KNC
G
Top view
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
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ZXMN2F30FH
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ VGS=4.5; TA=25°C(b)
@ VGS=4.5; TA=70°C(b)
@ VGS=4.5; TA=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at TA =25°C(a)
Linear derating factor
Power dissipation at TA =25°C(b)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj, Tstg
Limit
20
±12
4.9
4.0
4.1
22.6
1.6
22.6
0.96
7.6
1.4
11.2
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to Lead(d)
Symbol
R⍜JA
R⍜JA
R⍜JL
Limit
131
89
68
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
No Preview Available ! |
Thermal characteristics
ZXMN2F30FH
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
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Номер в каталоге | Описание | Производители |
ZXMN2F30FH | 20V SOT23 N-channel enhancement mode MOSFET | Zetex Semiconductors |
ZXMN2F30FHQ | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
ZXMN2F30FHTA | 20V SOT23 N-channel enhancement mode MOSFET | Zetex Semiconductors |
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