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PDF NP60N04NUK Data sheet ( Hoja de datos )
| Número de pieza | NP60N04NUK | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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Preliminary Data Sheet
NP60N04MUK, NP60N04NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0597EJ0100
Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A)
Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP60N04MUK-S18-AY *1
NP60N04NUK-S18-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-220 (MP-25K)
TO-262 (MP-25SK)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 0 V
Ratings
40
20
60
240
105
1.8
175
–55 to 175
28
78
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43 °C/W
83.3 °C/W
R07DS0597EJ0100 Rev.1.00
Jan 11, 2012
Page 1 of 6
1 page  
NP60N04MUK, NP60N04NUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
7
6
5
4
3
2
1
0
–100 –50
0
VGS = 10 V
ID = 30 A
Pulsed
50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
10
ID - Drain Current - A
td(off)
td(on)
tr
tf
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
VGS = 10 V
VGS = 0 V
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
VGS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 14
30 VDD = 32 V 12
20 V
25 8 V 10
20 8
15 6
VGS
10 4
5
VDS
2
ID = 60 A
00
0 5 10 15 20 25 30 35 40 45
QG- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1 10 100
IF - Drain Current - A
R07DS0597EJ0100 Rev.1.00
Jan 11, 2012
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP60N04NUK.PDF ] | |
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