DataSheet26.com

NP88N03KDG PDF даташит

Спецификация NP88N03KDG изготовлена ​​​​«Renesas» и имеет функцию, называемую «N-CHANNEL POWER MOS FET».

Детали детали

Номер произв NP88N03KDG
Описание N-CHANNEL POWER MOS FET
Производители Renesas
логотип Renesas логотип 

7 Pages
scroll

No Preview Available !

NP88N03KDG Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N03KDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP88N03KDG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
Channel temperature 175 degree rating
Super low on-state resistance
RDS(on)1 = 2.4 mMAX. (VGS = 10 V, ID = 44 A)
RDS(on)2 = 3.9 mMAX. (VGS = 4.5 V, ID = 44 A)
Low Ciss: Ciss = 9000 pF TYP. (VDS = 25 V)
4.5 V gate drive type
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP88N03KDG
TO-263 (MP-25ZK)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±88
±352
Total Power Dissipation (TA = 25°C)
PT1
1.8
Total Power Dissipation (TC = 25°C)
PT2
200
Channel Temperature
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tch 175
Tstg 55 to +175
IAR 59
EAR 348
Notes 1. PW 10 µs, Duty Cycle 1%
2. Tch 150°C, VDD = 15 V, RG = 25 , VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17404EJ3V0DS00 (3rd edition)
Date Published April 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004









No Preview Available !

NP88N03KDG Даташит, Описание, Даташиты
NP88N03KDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage Note
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
VDS = 30 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 44 A
VGS = 10 V, ID = 44 A
RDS(on)2 VGS = 4.5 V, ID = 44 A
Input Capacitance
Ciss VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 44 A
Rise Time
Turn-off Delay Time
tr
td(off)
VGS = 10 V
RG = 0
Fall Time
Total Gate Charge
tf
QG VDD = 24 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 88 A
IF = 88 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
trr IF = 88 A, VGS = 0 V
Qrr di/dt = 100 A/µs
MIN.
1.5
37
TYP.
2.0
75
1.9
2.4
9000
1100
740
35
1100
125
23
165
26
50
0.9
60
78
MAX.
1
±100
2.5
2.4
3.9
13500
1650
1340
80
2750
250
60
250
1.5
UNIT
µA
nA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D17404EJ3V0DS









No Preview Available !

NP88N03KDG Даташит, Описание, Даташиты
NP88N03KDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
240
200
160
120
80
40
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
ID(pulse) = 352 A
ID(DC) = 88 A
PW = 100 µs
RDS(on) Limited
(at VGS = 10 V)
10
DC
1
1 ms
10 ms
TC = 25°C
Single pulse
0.1
0.1
1
10
VDS - Drain to Source Voltage - V
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10 Rth(ch-A) = 83.3°C/W
1
Rth(ch-C) = 0.75°C/W
0.1
0.0110 µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single pulse
10 100 1000
Data Sheet D17404EJ3V0DS
3










Скачать PDF:

[ NP88N03KDG.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NP88N03KDGN-CHANNEL POWER MOS FETRenesas
Renesas

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск