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PDF HM4953 Data sheet ( Hoja de datos )
| Número de pieza | HM4953 | |
| Descripción | Dual P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | H&M Semiconductor | |
| Logotipo |  |
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HM4953
Dual P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM4953 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -5.1A
RDS(ON) < 105mΩ @ VGS=-4.5V
RDS(ON) < 55mΩ @ VGS=-10V
D1
G1
G2
D2
S1 S2
Schematic diagram
HM4953
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
HM4953
HM4953
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-30
±20
-5.1
-20
2.5
-55 To 150
50
Unit
V
V
A
A
W
℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
Page 1
Min Typ Max Unit
-30 -33
--
-
-1
V
μA
v1.0
1 page  
HM4953
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HM4953.PDF ] | |
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