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W13NK60Z PDF даташит

Спецификация W13NK60Z изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «STW13NK60Z».

Детали детали

Номер произв W13NK60Z
Описание STW13NK60Z
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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W13NK60Z Даташит, Описание, Даташиты
STB13NK60Z - STB13NK60Z-1
STP13NK60Z/FP - STW13NK60Z
N-CHANNEL 600V - 0.48- 13A - TO-220/FP - D²/I²PAK - TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB13NK60Z-1
STB13NK60Z
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
600 V
600 V
600 V
600 V
600 V
<0.55
<0.55
<0.55
<0.55
<0.55
ID
13 A
13 A
13 A
13 A
13 A
Pw
150 W
150 W
35 W
150 W
150 W
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES
DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
Order codes
Package
3
2
1
TO-220
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-247
3
1
D²PAK
Internal schematic diagram
Sales Type
STB13NK60Z-1
STB13NK60ZT4
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
September 2005
Marking
B13NK60Z-1
B13NK60Z
P13NK60ZFP
P13NK60Z
W13NK60Z
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
TUBE
TAPE & REEL
TUBE
TUBE
TUBE
Rev 2
1/17
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17









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W13NK60Z Даташит, Описание, Даташиты
1 Electrical ratings
STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20k)
VGS Gate-Source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt Note 3 Peak Diode Recovery voltage slope
VISO
Insulation Withstand Volatge (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
Value
TO-220 / TO-247
I²PAK / D²PAK
TO-220FP
13
8.2
52
150
1.20
--
600
600
± 30
4000
4.5
13 (Note 1)
8.2 (Note 1)
52 (Note 1)
35
0.27
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
Table 2. Thermal data
Rthj-case
Rthj-pcb
Note 7
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220
I²PAK / TO-247
D²PAK
0.83
-- 60
62.5
300
TO-220FP Unit
3.6 °C/W
-- °C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
Max Value
10
400
Unit
A
mJ
2/17









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W13NK60Z Даташит, Описание, Даташиты
STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z 2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 1 mA, VGS= 0
VDS = Max Rating,
VDS = Max Rating,Tc=125°C
VGS = ±20 V
VDS= VGS, ID = 100 µA
VGS= 10 V, ID= 4.5 A
Min.
600
3
Typ.
3.75
0.48
Max.
1
50
±10
4.5
0.55
Unit
V
µA
µA
µA
V
Table 5. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Forward Transconductance VDS =8V, ID = 5 A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V, ID = 10A
VGS =10V
(see Figure 19)
Min.
Typ.
11
2030
210
48
Max.
Unit
S
pF
pF
pF
125 pF
66 92 nC
11 nC
33 nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=300 V, ID= 5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=300 V, ID= 5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=480 V, ID= 10A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Min. Typ. Max. Unit
22 ns
14 ns
61 ns
12 ns
10 ns
9 ns
20 ns
3/17










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W13NK60ZSTW13NK60ZSTMicroelectronics
STMicroelectronics

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