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PDF CEM6659 Data sheet ( Hoja de datos )

Número de pieza CEM6659
Descripción Dual Enhancement Mode Field Effect Transistor
Fabricantes CET 
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No Preview Available ! CEM6659 Hoja de datos, Descripción, Manual

CEM6659
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
60V, 4.1A, RDS(ON) = 68m@VGS = 10V.
RDS(ON) = 86m@VGS = 4.5V.
-60V, -3.1A, RDS(ON) = 130m@VGS = -10V.
RDS(ON) = 170m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 60
VGS ±20
ID 4.1
IDM 15
P-Channel
-60
±20
-3.1
-12
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.May
http://www.cet-mos.com

1 page




CEM6659 pdf
P-CHANNEL
10
-VGS=10,8V
8
-VGS=6V
6 -VGS=5V
4
2
0
0123456
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
1200
1000
Ciss
800
600
400
200 Coss
Crss
0
0 6 12 18 24 30
-VDS, Drain-to-Source Voltage (V)
Figure 9. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
5
CEM6659
10
8
25 C
6
4
2
TJ=125 C
-55 C
0
0123456
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2
ID=-3.1A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 10. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current

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