DataSheet26.com

BC858C PDF даташит

Спецификация BC858C изготовлена ​​​​«WEITRON» и имеет функцию, называемую «General Purpose Transistor PNP Silicon».

Детали детали

Номер произв BC858C
Описание General Purpose Transistor PNP Silicon
Производители WEITRON
логотип WEITRON логотип 

4 Pages
scroll

No Preview Available !

BC858C Даташит, Описание, Даташиты
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
General Purpose Transistor
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
3
1
2
SOT-23
MARKING DIAGRAM
3
XX = Device
Code (See
1 2 Table Below)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
Collector-Base Voltage
BC856
BC857
BC858,BC859
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-65
-45
-30
-80
-50
-30
-5.0
-100
Unit
V
V
V
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Symbol
PD
R θJA
PD
R θJA
Max
225
1.8
556
300
2.4
417
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
Junction and Storage, Temperature
TJ,Tstg
-55 to +150
C
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC= -10mA)
BC856 Series
BC857 Series
V(BR)CEO
-65
-45
-
-
-V
-
BC858, BC859 Series
-30 - -
Collector-Emitter Breakdown Voltage
(IC=-10 µA ,VEB=0)
BC856 Series
BC857 Series
V(BR)CES
-80
-50
-
-
-V
-
BC858, BC859 Series
-30 - -
Collector-Base Breakdown Voltage
(IC=-10 µA)
BC856 Series
BC857 Series
V(BR)CBO
-80
-50
-
-
-V
-
BC858, BC859 Series
-30 - -
Emitter-Base Breakdown Voltage
(IE=-1.0 µA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)EBO
-5.0
-5.0
-5.0
- -V
--
--
Collector Cutoff Current (VCB=-30V)
(VCB=-30V, TA=150 C)
ICBO
-
-
- -15 nA
- -4.0 mA
WEITRON
http://www.weitron.com.tw
1/4 Rev A 12-Apr-05









No Preview Available !

BC858C Даташит, Описание, Даташиты
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
On Characteristics
DC Current Gain
(IC= -10uA, VCE=-5.0V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
(IC= -2.0mA,VCE=-5.0V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
Collector-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
Base-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
Base-Emitter On Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
hFE
VCE(sat)
VBE(sat)
VBE(on)
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -10mA, VCE= -5.0VDC, f=100MHz)
Output Capacitance
(VCB= -10V, f=1.0MHz)
Noise Figure
(IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0k, f=1.0kHz, BW=200Hz)
BC856, BC857, BC858 Series
BC859, Series
fT
Cobo
NF
Device Marking
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G
BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C
Min
-
-
-
125
220
420
-
-
-
-
-0.6
-
100
-
-
-
WE ITR ON
Typ Max
Unit
90 -
150 -
270 -
180 250
290 475
520 800
- -0.3
- -0.65
-0.7 -
-0.9 -
- -0.75
- -0.82
-
V
V
V
- - MHz
- 4.5 pF
dB
- 10
- 4.0
WEITRON
http://www.weitron.com.tw
2/4 Rev A 12-Apr-05









No Preview Available !

BC858C Даташит, Описание, Даташиты
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE ITR ON
BC857/BC858/BC859 Series
2.0
1.5
VCE=10V
TA=25 C
1.0
0.7
0.5
0.3
0.2 -0.2 -0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
-1.0
-0.9 TA=25 C
-0.8
VBE(sat)@IC/BC=10
-0.7
-0.6 VBE(ON)@VCE= -10V
-0.5
-0.4
-0.3
-0.2
-0.1 VCE(sat)@IC/BC=10
0
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
IC, COLLECTOR CURRENT (mAdc)
Firure2. "Saturation" And "On" Voltage
-2.0
TA=25 C
-1.6
-1.2
-0.8
IC=
-10mA
-0.4
IC= -50mA
IC= -20mA
IC= -200mA
IC= -100mA
0
-0.02
-0.1
-1.0 -10 -20
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
1.0
-55 C to +125 C
1.2
1.6
2.0
2.4
2.8
-0.2 -1.0
-10 -100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter Temperature Coefficient
10
Cib
7.0
TA=25 C
5.0
3.0 Cob
2.0
1.0
-0.4 -0.6
-1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
400
300
200
150 VCE= -10V
TA= 25 C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0 -5.0
-10 -20 -30
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain- Bandwidth Product
-50
WEITRON
http://www.weitron.com.tw
3/4 Rev A 12-Apr-05










Скачать PDF:

[ BC858C.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BC858PNP Silicon Epitaxial TransistorsKingtronics
Kingtronics
BC858PNP GENERAL PURPOSE TRANSISTORSPan Jit International
Pan Jit International
BC858SMALL SIGNAL PNP TRANSISTORSSTMicroelectronics
STMicroelectronics
BC858PNP EPITAXIAL SILICON TRANSISTORFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск