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даташит BC856A PDF ( Datasheet )

BC856A Datasheet Download - Taiwan Semiconductor

Номер произв BC856A
Описание 0.2 Watts PNP Plastic-Encapsulate Transistors
Производители Taiwan Semiconductor
логотип Taiwan Semiconductor логотип 



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BC856A Даташит, Описание, Даташиты
BC856A/B, BC857A/B/C, BC858A/B/C
200mW, PNP Small Signal Transistor
Small Signal Product
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOT-23
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
High temperature soldering guaranteed : 260°C/10s
Weight : 0.008 grams (approximately)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Symbol
Power Dissipation
PD
BC856
Collector-Base Voltage
BC857
VCBO
BC858
BC856
Collector-Emitter Voltage
BC857
VCEO
BC858
Emitter-Base Voltage
VEBO
Collector Current
IC
Junction and Storage Temperature Range
TJ , TSTG
Notes : 1. Valid provided that electrodes are kept at ambient temperature
Value
200
-80
-50
-30
-65
-45
-30
-5
-0.1
-55 to + 150
Units
mW
V
V
V
A
°C
Version : F14







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BC856A Даташит, Описание, Даташиты
Small Signal Product
Electrical Characteristics ( TA= 25oC unless otherwise noted )
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Parameter
BC856
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
VCE= -5V
IC= -10μA
IE= 0
IC= -10mA
IB= 0
IE= -1μA
VCB= -70V
VCB= -45V
VCB= -25V
VEB= -5V
IC= 0
IE= 0
IC=0
VCE= -5V
IC= -2mA
IC= -100mA
IC= -100mA
IC= -10mA
IB= -5mA
IB= -5mA
f= 100MHz
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Min
-80
-50
-30
-65
-45
-30
-5
-
-
-
-
125
220
420
-
-
100
Max Units
-V
-
-
-100
-100
-100
-0.1
250
475
800
-0.65
-1.1
-
V
V
nA
μA
V
V
MHz
Version : F14







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BC856A Даташит, Описание, Даташиты
Small Signal Product
RATINGS AND CHARACTERISTIC CURVES
Fig. 1 Static Characteristic
50
45 IB = -400μA
40 IB = -350μA
35 IB = -300μA
30 IB = -250μA
25 IB =- 200μA
20 IB = -150μA
15
10 IB = -100μA
5 IB = -50μA
0
0 2 4 6 8 10 12 14 16 18 20
VCE[V], Collector-Emitter Voltage
1000
100
Fig. 2 DC Current Gain
VCE = - 5V
10
-0.1
-1.0 -10.0
IC[mA], Collector Current
-100.0
Fig.3 Base-Emitter Saturation Voltage
VS.Collector-Emitter Saturation
10
IC = 10 IB
1 VBE(sat)
-100.
-10.
Fig. 4 Base-Emitter On Voltage
VCE = - 5V
VCE(sat)
0.1
-1.
0.01
0.1
1 10
IC[mA], Collector Current
100
Fig.5 Collector Output Capacitance
100
f=1MHz IE=0
10
1
-1.
-10. -100.
VCB[V], Collector-Base Voltage
-1000.
-0.
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], Base-Emitter Voltage
1000
Fig. 6 Current Gain Bandwidth Product
f=1MHz IE=0
100
10
1
-0.
-1. -10.
IC[mA], Collector Current
-100.
Version : F14










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