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даташит BC856A PDF ( Datasheet )

BC856A Datasheet Download - Pan Jit International

Номер произв BC856A
Описание PNP GENERAL PURPOSE TRANSISTORS
Производители Pan Jit International
логотип Pan Jit International логотип 



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BC856A Даташит, Описание, Даташиты
BC856 SERIES
DATA SHEET
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE 65/45/30 Volts POWER 225 mW
SOT- 23
FEATURES
General Purpose Amplifier Applications
NPN Epitaxial Silicon, Planar Design
Collector Current IC = -100mA
Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series
Pb free product are available : 99% Sn above can meet RoHS environment
substance directive request
.119(3.00)
.110(2.80)
.083(2.10)
.066(1.70)
MECHANICAL DATA
Case: SOT-23
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.008 grams
Device Marking :
.006(.15)MAX
.020(.50)
.014(.35)
Unit: inch (mm)
.006(.15)
.002(.05)
BC856A=56A BC857A=57A
BC856B=56B BC857B=57B
BC857C=57C
BC858A=58A
BC858B=58B
BC858C=58C
BC859B=59B
BC859C=59C
Top View
3
Collector
1
BASE
3
COLLECTOR
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PA RA ME TE R
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Max Power Dissipation (Note 1)
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
S YMB OL B C 8 5 6 B C 8 5 7 B C 8 5 8 B C 8 5 9 UNITS
VCEO
-65
-45
-30
V
VCBO
-80
-50
-30
V
VEBO
-5
V
IC
-100
mA
P TOT
225 mW
TJ,TSTG
-50 TO +150
OC
STAD-JUL.11.2005
PAGE . 1







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BC856A Даташит, Описание, Даташиты
BC856 SERIES
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance , Junction to Ambient
RΘJA
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout.
Value
556
UNIT
OC /W
EL ECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
(IC=-10mA, IB=0)
SYMBOL
BC856A,B
BC857A,B,C V(BR)CE0
BC858A,B,C, BC859B,C
MIN.
-65
-45
-30
Collector - Base Breakdown Voltage
(IC=-10µA, IE=0)
BC856A,B
BC857A,B,C V(BR)CB0
BC858A,B,C, BC859B,C
-80
-50
-30
Emitter - Base Breakdown Voltage (IE=-1µA, IC=0)
V(BR)EB0
-5.0
Emitter-Base Cutoff Current (VEB=-5V)
IEBO
-
Collector-Base Cutoff Current (VCB=-30V, IE=0)
DC Current Gain
(IC=-10µA, VCE=-5V)
T J=150 OC
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
(IC=-2.0mA, VCE=-5V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
ICBO
hFE
-
-
-
-
-
110
200
420
Collector – Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
Base – Emitter Saturation Voltage
(IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
Base – Emitter On Voltage
(IC=-2.0mA, VCE=-5.0V)
(IC=-10mA, VCE=-5.0V)
Collector - Base Capacitance
(VCB=-10V, IE=0, f=1MHz)
VCE(SAT)
VBE(SAT)
VBE(ON)
CCB
-
-
-
-
-0.60
-
-
Current-Gain - Bandwidth Product
(IC=-10mA, VCE=-5.0V, f=100MHz)
FT -
TYP.
-
-
-
-
-
-
-
-
-
-
90
150
270
180
290
520
-
-
-0.7
-0.9
-
-
-
200
MAX.
-
-
-
-
-
-
-
-100
-15
-4.0
-
-
-
220
450
800
-0.3
-0.65
-
-
-0.75
-0.82
4.5
-
UNIT
V
V
V
nA
nA
uA
-
V
V
V
pF
MHz
STAD-JUL.11.2005
PAGE . 2







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BC856A Даташит, Описание, Даташиты
BC856 SERIES
ELECTRICAL CHARACTERISTICS CURVES
600
TJ=150OC
500
400 TJ=100OC
300
200
TJ=25OC
100 V =CE -5V
0
0.01
0.1 1 10
Collector Current,IC(mA)
100
Fig.1- TYPICAL hFE vs. Collector Current
0.9
0.8
0.7 TJ=25OC
0.6
0.5 TJ=100OC
0.4
0.3
0.2
0.1
0
0.01
TJ=15 OC
VCE = -5V
0.1 1
10
Collector Current, IC(mA)
100
Fig.2- TYPICAL VBE(ON) vs. Collector Current
0.3
0.25
0.2
0.15
0.1
TJ=150OC
TJ=100OC
0.05
TJ=25OC
0
0.01
0.1
1
10
Collector Current,IC(mA)
100
Fig.3- TYPICAL VCE(SAT) vs. Collector Current
14
12
CIB (EB)
10
8
6
4 COB (BC)
2
0
0.1 1
10
Reverse Voltage,VR(V)
100
Fig.4- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE
STAD-JUL.11.2005
PAGE . 3










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