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SD723 PDF даташит

Спецификация SD723 изготовлена ​​​​«Polyfet RF Devices» и имеет функцию, называемую «RF POWER TRANSISTOR VDMOS».

Детали детали

Номер произв SD723
Описание RF POWER TRANSISTOR VDMOS
Производители Polyfet RF Devices
логотип Polyfet RF Devices логотип 

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SD723 Даташит, Описание, Даташиты
polyfet rf devices
SD723
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"TM process features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
60.0 Watts Push - Pull
Package Style AD
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
Total
Device
Dissipation
270 Watts
Junction to
Case Thermal
Resistance
o
0.65 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
200 oC
oo
-65 C to 150 C
15.0 A
36 V
Drain to
Source
Voltage
36 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 60.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
13
65
dB Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz
% Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
36 V Ids = 60.00 mA, Vgs = 0V
3.0 mA
Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
2
5V
Ids = 0.30 A, Vgs = Vds
gM Forward Transconductance
3.9 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.25
Ohm
Vgs = 20V, Ids = 7.50 A
Idsat
Saturation Current
28.50
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
135.0
pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
10.5
pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
165.0
pF Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com









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SD723 Даташит, Описание, Даташиты
SD723
POUT VS PIN GRAPH
SD 723 Pout/Gain vs Pin F=175MH z, Vds = 12.5Vdc, Idq = 800ma
80 19.0
70
60
Pout
50
40
30
Efficie ncy@ 60W =67%
20
10
Gain
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
0 10.0
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00
P in in W a tts
IV CURVE
S1C 3 DIE IV
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v VDg=S6IvNVOLTS vg=8v 0 vg=12v
Zin Zout
CAPACITANCE VS VOLTAGE
S1C 3 DICE CAPACITANCE
1000
Coss
100
Ciss
10
Crss
1
02
100.00
4 6 8 10 12 14 16 18 20
VDS IN VOLTS
ID & GM VS VGS
S1C 3 DIE ID & GM Vs VG
Id
10.00
gM
1.00
0.10
0
2 4 6 8 10 12 14 16
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
18
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com










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Номер в каталогеОписаниеПроизводители
SD723RF POWER TRANSISTOR VDMOSPolyfet RF Devices
Polyfet RF Devices

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