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C30902 PDF даташит

Спецификация C30902 изготовлена ​​​​«Excelitas» и имеет функцию, называемую «High-speed solid state detectors».

Детали детали

Номер произв C30902
Описание High-speed solid state detectors
Производители Excelitas
логотип Excelitas логотип 

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C30902 Даташит, Описание, Даташиты
DATASHEET
Photon Detection
C30902 and C30921 Series
High-speed solid state detectors for low light level applications
The C30902EH series of avalanche photodiodes is ideal for a wide range of applications,
including LIDAR, range-finding, small-signal fluorescence, photon counting and bar code
scanning.
Excelitas Technologies’ C30902EH series of avalanche photodiodes is fabricated
with a double-diffused “reach-through” structure. This structure provides high
responsivity between 400 and 1000 nm as well as extremely fast rise and fall times
at all wavelengths. The responsivity of the device is independent of modulation
frequency up to about 800 MHz. The detector chip is hermetically-sealed behind a
flat glass window in a modified TO-18 package. The useful diameter of the
photosensitive surface is 0.5 mm.
The C30921EH is packaged in a lightpipe TO-18 which allows efficient coupling of
light to the detector from either a focused spot or an optical fiber up to 0.25 mm in
diameter. The hermetically-sealed TO-18 package allows fibers to be mated to the
end of the lightpipe to minimize signal losses without fear of endangering detector
stability. The C30902EH-2 or C30902SH-2, with hermetic TO-18 package with inline
905nm passband filter and the C30902BH, with hermetic ball lens, complete the
C30902 family.
Key Features
High quantum efficiency: 77%
typical at 830 nm
C30902SH and C30921SH can be
operated in Geiger mode
C30902EH/SH-2 version with
built-in 905 nm filter
C30902BH version with ball-lens
Hermetically sealed package
Low Noise at room temperature
High responsivity internal
avalanche gains in excess of 150
Spectral response range
(10% Q.E. points) 400 to 1000 nm
Time response typically 0.5 ns
Wide operating temperature
range -40°C to +70°C
RoHS compliant
Applications
LIDAR
Range finding
Small-signal fluorescence
Photon counting
Bar code scanning
Both C30902SH and C30921SH are selected C30902EH and C30921EH photodiodes
having extremely low noise and bulk dark-current. They are intended for ultra-low
light level applications (optical power less than 1 pW) and can be used in either
their normal linear mode (Vr < Vbr) at gains up to 250 or greater, or as photon
counters in the “Geiger” mode (Vr > Vbr) where a single photoelectron may trigger
an avalanche pulse of about 108 carriers. In this mode, no amplifiers are necessary
and single-photon detection probabilities of up to approximately 50% are possible.
Photon-counting is also advantageous where gating and coincidence techniques are
employed for signal retrieval.
www.excelitas.com









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C30902 Даташит, Описание, Даташиты
C30902 and C30921 Series
High-speed solid state detectors for low light level applications
Table 1. Electro-optical Characteristics
Test conditions: Case temperature = 22˚C, unless otherwise specification, see notes on next page.
Detector Type
Parameter
Photosensitive area
active diameter
active area
Lightpipe characteristics (C30921)
Numerical aperture of light pipe
Index of refraction (n) of core
Core diameter
Field of view α (see Figure 15)
with standard/ball lens window
(-2) with built-in 905 nm filter
with lightpipe (in air)
Field of view α’ (see Figure 15)
with standard window/ball lens
(-2) with built-in 905 nm filter
Breakdown voltage, Vbr
Temperature coefficient of reverse bias,
Vr, voltage for constant gain
Detector Temperature (see note 2)
-TC
-DTC
Gain (see note 1)
Responsivity
at 830 nm (not applicable for -2)
at 900 nm
Quantum efficiency
at 830 nm (not applicable for -2)
at 900 nm
Dark current, id
-TC (at 0 °C)
-DTC (at -20 °C)
Noise current, in (see note 3)
-TC (at 0 °C)
-DTC (at -20 °C)
Capacitance
Rise/Fall time, RL=50 Ω
10% to 90% points
90% to 10% points
TEC maximal drive current
-TC
-DTC
TEC maximal bias voltage
-TC
-DTC
Dark count rate at 5% photon detection
probability (830 nm)
(see Figure 9 and note 4)
Voltage above Vbr for 5% photon
detection probability (830 nm)
(see Figure 7 and note 4)
After-pulse ratio at 5% photon detection
probability (830 nm) (note 5)
www.excelitas.com
C30902EH/C30902EH-2
C30902BH
C30921EH
Min Typ Max
C30902SH
C30902SH-2
C30921SH
Min Typ Max
0.5 0.5
0.2 0.2
0.55 0.55
1.61 1.61
0.25 0.25
90 90
55 55
33 33
114 114
78 78
225 225
0.5 0.7 0.9 0.5 0.7 0.9
150 250
70 77
55 65
117 128
92 108
77
60
15 30
77
60
15 30
0.23 0.5
0.11 0.2
1.6 2
0.5 0.75
0.5 0.75
1.6 2
0.5 0.75
0.5 0.75
5000 15000
Page 2 of 14
2
2
15
C30902SH-TC
C30902SH-DTC
Min Typ
Max
0.5
0.2
122
N/A
N/A
129
N/A
225
0.5 0.7
0.9
Units
mm
mm²
[no units]
[no units]
mm
Degrees
Degrees
V
V/˚C
0
-20
250
128
108
77
60
15 30
2
1
0.04
0.02
1.6 2
0.5 0.75
0.5 0.75
1.8
1.4
1100 (-TC)
250 (-DTC)
0.8
2.0
15000
˚C
˚C
A/W
A/W
%
%
nA
nA
nA
pA/Hz
pA/Hz
pA/Hz
pF
ns
ns
A
A
V
V
cps
2V
2%
C30902 and C30921 Series-Rev.1-2014.09









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C30902 Даташит, Описание, Даташиты
C30902 and C30921 Series
High-speed solid state detectors for low light level applications
Notes:
1. At the specific DC reverse operating voltage, Vop or Vr,
supplied with each device and a light spot diameter of 0.25
mm (C30902EH, SH) or 0.10 mm (C30921EH, SH). Operated
at this voltage, between 180 and 250V, the device will meet
the electrical characteristic limits shown above.
2. The temperature of the thermistor in Kelvin can be
calculated using the following equation: [ ] ( ) ,
where is the measured thermistor resistance in Ω,
,,
and
.
Table 2 Maximum Ratings
3. The theoretical expression for shot noise current in an avalanche photodiode is in =
(2q (Ids + (IdbM² + PORM) F) BW)½ where q is the electronic charge, Ids is the dark
surface current, Idb is the dark bulk current, F is the excess noise factor, M is the
gain, PO is the optical power on the device, and BW is the noise bandwidth. For
these devices F = 0.98 (2-1/M) + 0.02 M. (Reference: PP Webb, RJ McIntyre, JJ
Conradi, “RCA Review”, Vol. 35 p. 234, (1974)).
4. The C30902SH and C309021SH can be operated at a substantially higher detection
probability. (see Geiger Mode Operation section).
5. After-pulse occurring 1 µs to 60 seconds after main pulse.
Parameter
Symbol Min Max Units
Storage temperature
Operating temperature
Soldering for 5 seconds (leads only)
Reverse current at room temperature
Average value, continuous operation
Peak value (1 s duration, non-repetitive)
Forward current at room temperature
Average value, continuous operation
Peak value (1 s duration, non-repetitive)
Maximum Total Power Dissipation
TS -60 100 °C
Top -40 70 °C
200 °C
200 µA
1 mA
IF
5 mA
50 mA
60 mW
Electro-Optical Characteristics
Figure 1 Typical Spectral Responsivity at case temperature of 22 °C
1000
C30902EH/921EH
C30902SH/921SH
C30902EH-2
C30902SH-2
100
10
1
400
500
600
700
800
900
1000
1100
Wavelength [nm]
www.excelitas.com
Page 3 of 14
C30902 and C30921 Series-Rev.1-2014.09










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