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C30955EH PDF даташит

Спецификация C30955EH изготовлена ​​​​«Excelitas» и имеет функцию, называемую «Long Wavelength Enhanced Silicon Avalanche Photodiodes».

Детали детали

Номер произв C30955EH
Описание Long Wavelength Enhanced Silicon Avalanche Photodiodes
Производители Excelitas
логотип Excelitas логотип 

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C30955EH Даташит, Описание, Даташиты
DATASHEET
Photon Detection
C30954EH, C30955EH and C30956EH Series
Long Wavelength Enhanced Silicon Avalanche Photodiodes
for range finding, LIDAR, and YAG laser detection
ExcelitasC30954EH, C30955EH, and C30956EH are general purpose silicon
avalanche photodiodes made using a double-diffused "reach through"
structure. The design of these photodiodes is such that their long wave
response (i.e. > 900 nm) has been enhanced without introducing any
undesirable properties.
These APDs have quantum efficiency of up to 40% at 1060 nm. At the
same time, the diodes retain the low noise, low capacitance, and fast rise
and fall times characteristics.
Standard versions of these APDs are available in hermetically-sealed,
flat top glass TO-5 packages for the smaller area C30954EH and C30955EH,
and a TO-8 package for the larger area C30956EH.
To help simplify many design needs, these Si APDs are also available in
Excelitashigh-performance hybrid preamplifier module, C30659 Series, as
well as the preamplifier and Thermo-electric (TE) cooler incorporated
module, the LLAM Series.
Recognizing that different applications have different performance
requirements, Excelitas offers a wide range of customization options for
these APDs to meet your design challenges. TE cooler-packaged versions
are available on a custom basis. Operating and breakdown voltage
selection, dark current and NEP screening, custom device testing and
packaging are among the many application-specific solutions available.
www.excelitas.com
Page 1 of 8
Key Features
High quantum efficiency at
1060 nm
Fast response time
Wide operating temperature
range
Low capacitance
Hermetically-sealed packages
RoHS-compliant
Applications
Range finding
LIDAR
YAG laser detection
C30954-955-956EH series Rev.2011-12









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C30955EH Даташит, Описание, Даташиты
C30954EH, C30955EH, C30956EH Series
Long Wavelength Enhanced Silicon Avalanche Photodiodes
Table 1. Mechanical and Optical Characteristics
Photosensitive surface
C30954EH
C30955EH
C30956EH
Unit
Shape
Useful Area
Circular
0.5
Circular
1.77
Circular
7
mm2
Useful Diameter
0.8 1.5 3 mm
Package
TO-5
TO-5
TO-8
Field of View α (see figure 10 ) 1
110
104
132 Degrees
Field of View α' (see figure 10 ) 1
125
130
150 Degrees
1. The values specified for field of view are approximate and are critically dependent on the dimensional tolerances of the packages component parts.
Table 2. Electrical Characteristics at TA = 22 °C; at the DC reverse operating voltage V, supplied with the
device2
Parameter
C30954EH
C30955EH
C30956EH
Breakdown Voltage, VBR 2
Temperature Coefficient
of VR, for Constant M
Gain (M)
Min Typ Max Min Typ Max Min Typ Max Unit
300 375 475 315 390 490 325 400 500
V
- 2.4 -
- 2.4
-
- 2.4 - V/°C
- 120 -
- 100
-
- 75
-
Responsivity
@ 900 nm
@ 1060 nm
@ 1150 nm
65 75
30 36
45
- 55 70
- 26 34
- 45
- 36 45
- 20 25
- 2.8 3.5
- A/W
- A/W
- A/W
Quantum Efficiency
@ 900 nm
@ 1060 nm
@ 1150 nm
- 85 - - 85 - - 85 -
- 36 - - 40 - - 40 -
- 5 - -5 - -5 -
%
%
%
Total Dark Current, Id
Noise Current, in
f=10kHz, Δf=1.0Hz
Capacitance, Cd
- 50 100 - 100 200 - 100 200 nA
- 0.7 2
- 0.7 2
- 0.8 2.2 pA/√Hz
- 2 4 - 3 5 - 10 12 pF
Series resistance
- - 15 - - 15 - - 15
Rise & Fall Time,
RL=50 Ω, 10%-90%-10%
points
- 2 3 - 2 3.5 - 2 3.5 ns
2. A specific value of VR is supplied with each device. When the photodiode is operated at this voltage, the device will meet the electrical
characteristic limits shown above. The voltage value will be within the range of 275 to 450 volts.
www.excelitas.com
Page 2 of 8
C30954-955-956EH series Rev.2011-12









No Preview Available !

C30955EH Даташит, Описание, Даташиты
C30954EH, C30955EH, C30956EH Series
Long Wavelength Enhanced Silicon Avalanche Photodiodes
Table 3 Maximum ratings
Parameter
Reverse Bias Current
Photocurrent Density, Jp, at 22 °C:
Average value, continuous operation
Peak value
Forward Current, IF, at 22°C:
Average value, continuous operation
Peak value (For 1 second duration, non-repetitive)
Storage Temperature
Operating Temperature
Soldering, 5 seconds, leads only
Min Typical Max
200
Unit
μA
5 mA/mm2
20
5
50
mA
-60
+100
°C
-40 +70
260 °C
Figure 1
Typical Spectral
Responsivity
Characteristics
Figure 2
Typical Responsivity at
900 nm vs. Operating
Voltage - C30954EH
www.excelitas.com
Page 3 of 8
C30954-955-956EH series Rev.2011-12










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Номер в каталогеОписаниеПроизводители
C30955E(C30954E - C30956E) PhotodiodeETC
ETC
C30955EHLong Wavelength Enhanced Silicon Avalanche PhotodiodesExcelitas
Excelitas

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