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WFF630 PDF даташит

Спецификация WFF630 изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon N-Channel MOSFET».

Детали детали

Номер произв WFF630
Описание Silicon N-Channel MOSFET
Производители Winsemi
логотип Winsemi логотип 

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WFF630 Даташит, Описание, Даташиты
WFF630
Silicon N-Channel MOSFET
Features
■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 22nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor control.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TJ, Tstg
TL
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
Derating Factor above 25
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
200
9
5.7
36
±30
160
7.2
5.5
40
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 3.12
- 0.5
-
- - 62.5
Units
/W
/W
/W
Rev, A Jun.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T01-3









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WFF630 Даташит, Описание, Даташиты
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
WFF630
Min Type Max Unit
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
- - ±100 nA
Gate−source breakdown voltage
Drain cut−off current
V(BR)GSS
IDSS
IG = ±10 μA, VDS = 0 V
VDS = 200 V, VGS = 0 V
±30 - - V
- - 10 μA
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
ΔBVDSS/
ΔTJ
ID = 250 μA, VGS = 0 V
ID=250μA, Referenced to 25
200
-
-
0.2
-V
- V/
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2 -4V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 4.5A
- - 0.4 Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 4.5A
- 7.05 -
S
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn−on time ton
Switching time Fall time
tf
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =100 V,
ID = 9 A
RG=12 Ω
- 500 720
-
23 30
pF
- 85 110
- 11 30
- 70 150
-
60 130
ns
Turn−off time toff
Total gate charge (gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
(Note4,5)
VDD = 160 V,
VGS = 10 V,
ID = 9 A
-
(Note4,5)
-
-
-
65 140
22 29
3.6 - nC
10 -
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Continuous drain reverse current IDR
Pulse drain reverse current
IDRP
Forward voltage (diode)
VDSF
Reverse recovery time
trr
Reverse recovery charge
Qrr
Test Condition
-
-
IDR = 9 A, VGS = 0 V
IDR = 9A, VGS = 0 V,
dIDR / dt = 100 A / μs
Min Type Max Unit
- -9A
- - 36 A
- 1.4 1.5 V
- 140
-
ns
- 1.1 2.2 μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,StartingTJ=25
3.ISD≤9A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width≤300us,DutyCycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, keep you advance
2/7









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WFF630 Даташит, Описание, Даташиты
WFF630
Fig. 1 On-State Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.4 Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.6 Gate Charge Characteristics
Steady, keep you advance
3/7










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