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PDF NP110N04PDG Data sheet ( Hoja de datos )
| Número de pieza | NP110N04PDG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP110N04PDG-E1-AZ Note
Pure Sn (Tin)
NP110N04PDG-E2-AZ Note
Note See “TAPE INFORMATION”
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
typ. 1.5 g
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TA = 25°C)
PT1 1.8
Total Power Dissipation (TC = 25°C)
PT2 288
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR 72
Repetitive Avalanche Energy Note2
EAR 518
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17561EJ2V0DS00 (2nd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2005
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
3.5
3
VGS = 4.5 V
2.5
2
1.5 10 V
1
ID = 55 A
0.5 Pulsed
0
-100 -50 0 50 100 150
Tch - Channel Temperature - °C
200
10000
SWITCHING CHARACTERISTICS
1000
100
10
1
0.1
td(off)
tr
td(on)
tf VDD = 20 V
VGS = 10 V
RG = 0 Ω
1 10 100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
Pulsed
0.1
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP110N04PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
Coss
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50 10
40 VDD = 32 V
20 V
8V
30
8
6
20 VGS 4
10
0
0
2
VDS
ID = 110 A
0
50 100 150 200 250
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10 100
IF - Diode Forward Current - A
1000
Data Sheet D17561EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP110N04PDG.PDF ] | |
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