DataSheet26.com

7N65K-MT PDF даташит

Спецификация 7N65K-MT изготовлена ​​​​«UNISONIC TECHNOLOGIES» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 7N65K-MT
Описание N-CHANNEL POWER MOSFET
Производители UNISONIC TECHNOLOGIES
логотип UNISONIC TECHNOLOGIES логотип 

7 Pages
scroll

No Preview Available !

7N65K-MT Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
7N65K-MT
7A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N65K-MT is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
high speed switching applications of switching power supplies and
adaptors.
FEATURES
* RDS(ON) < 1.6 @VGS = 10 V, ID = 3.5 A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
7N65KL-TA3-T
7N65KG-TA3-T
TO-220
7N65KL-TF3-T
7N65KG-TF3-T
TO-220F
7N65KL-TF1-T
7N65KG-TF1-T
TO-220F1
7N65KL-TF2-T
7N65KG-TF2-T
TO-220F2
7N65KL-TF3T-T
7N65KG-TF3T-T
TO-220F3
7N65KL-TM3-T
7N65KG-TM3-T
TO-251
7N65KL-TN3-R
7N65KG-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12 3
GD S
GD S
GD S
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-020.C









No Preview Available !

7N65K-MT Даташит, Описание, Даташиты
7N65K-MT
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-020.C









No Preview Available !

7N65K-MT Даташит, Описание, Даташиты
7N65K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
Continuous Drain Current
IAR 7 A
ID 7 A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IDM
EAS
24 A
350 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220
125 W
Power Dissipation
TO-220F/TO-220F1
TO-220F3
TO-220F2
PD
40 W
42 W
TO-251/TO-252
55 W
Junction Temperature
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 14.28mH, IAS = 7A, VDD = 90V, RG = 25 , Starting TJ = 25°C
4. ISD 6A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-220F3
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
TO-251/TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
1.0
3.2
2.97
2.27
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R205-020.C










Скачать PDF:

[ 7N65K-MT.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
7N65K-MTN-CHANNEL POWER MOSFETUNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
7N65K-MTQN-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск