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даташит IRF2804SPbF PDF ( Datasheet )

IRF2804SPbF Datasheet Download - International Rectifier

Номер произв IRF2804SPbF
Описание HEXFET Power MOSFET
Производители International Rectifier
логотип International Rectifier логотип 



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IRF2804SPbF Даташит, Описание, Даташиты
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of other
applications.
PD - 95332B
IRF2804PbF
IRF2804SPbF
IRF2804LPbF
HEXFET® Power MOSFET
D VDSS = 40V
G RDS(on) = 2.0m‰
S ID = 75A
TO-220AB
IRF2804PbF
D2Pak
TO-262
IRF2804SPbF IRF2804LPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
270
190
75
1080
300
2.0
± 20
540
1160
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
l0.50
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
05/12/10







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IRF2804SPbF Даташит, Описание, Даташиты
IRF2804/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆ΒVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on) SMD Static Drain-to-Source On-Resistance
RDS(on) TO-220 Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
40 ––– –––
––– 0.031 –––
––– 1.5 2.0
––– 1.8 2.3
2.0 ––– 4.0
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
fmVGS = 10V, ID = 75A
fVGS = 10V, ID = 75A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
130 ––– ––– S VDS = 10V, ID = 75A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 160 240 nC ID = 75A
Qgs Gate-to-Source Charge
––– 41 62
VDS = 32V
fQgd
Gate-to-Drain ("Miller") Charge
––– 66 99
VGS = 10V
td(on)
Turn-On Delay Time
––– 13 ––– ns VDD = 20V
tr Rise Time
––– 120 –––
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 130 –––
––– 130 –––
fRG = 2.5
VGS = 10V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
LS Internal Source Inductance
––– 7.5 –––
6mm (0.25in.)
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
––– 6450 –––
––– 1690 –––
––– 840 –––
––– 5350 –––
––– 1520 –––
––– 2210 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 270
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
A showing the
––– ––– 1080
integral reverse
G
––– ––– 1.3
––– 56 84
––– 67 100
fp-n junction diode.
S
V TJ = 25°C, IS = 75A, VGS = 0V
fns TJ = 25°C, IF = 75A, VDD = 20V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‚ Limited by TJmax, starting TJ = 25°C,
L=0.24mH, RG = 25, IAS = 75A, VGS =10V.
‡ This value determined from sample failure population. 100%
tested to this value in production.
Part not recommended for use above this value.
ƒ ISD 75A, di/dt 220A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
‰ Max RDS(on) for D2Pak and TO-262 (SMD) devices.
Š TO-220 device will have an Rth value of 0.45°C/W.
charging time as Coss while VDS is rising from 0 to 80%
2VDSS.
www.irf.com







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IRF2804SPbF Даташит, Описание, Даташиты
IRF2804/S/LPbF
10000
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10000
1000
TOP
TOP
VV1GG5VSS
151V0V
108V.0V
8.70.V0V
76.0.V0V
65.0.V5V
55.5.V0V
BOTTOM 54.05V
BOTTOM 4.5V
10
1
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
100
10
0.1
4.5V
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
TJ = 175°C
100
TJ = 25°C
10
1
4.0
VDS = 10V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
www.irf.com
300
250
200
150
100
50
0
0
TJ = 25°C
TJ = 175°C
VDS = 10V
20µs PULSE WIDTH
40 80 120 160
ID, Drain-to-Source Current (A)
200
Fig 4. Typical Forward Transconductance
vs. Drain Current
3










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