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NP180N04TUJ PDF даташит

Спецификация NP180N04TUJ изготовлена ​​​​«Renesas» и имеет функцию, называемую «MOS FIELD EFFECT TRANSISTOR».

Детали детали

Номер произв NP180N04TUJ
Описание MOS FIELD EFFECT TRANSISTOR
Производители Renesas
логотип Renesas логотип 

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NP180N04TUJ Даташит, Описание, Даташиты
NP180N04TUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0180EJ0100
Rev.1.00
Dec 17, 2010
Description
The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP180N04TUJ -E1-AY 1
NP180N04TUJ -E2-AY 1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263-7pin, Taping (E1 type)
TO-263-7pin, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) 2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current 3
Repetitive Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±180
±720
348
1.8
175
55 to +175
72
518
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance 2
Rth(ch-C)
Rth(ch-A)
0.43
83.3
°C/W
°C/W
Notes: 1. TC = 25°C, PW 10 μs, Duty Cycle 1%
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
3. Tch(peak) 150°C, RG = 25 Ω
R07DS0180EJ0100 Rev.1.00
Dec 17, 2010
Page 1 of 6









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NP180N04TUJ Даташит, Описание, Даташиты
NP180N04TUJ
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Min
2.0
65
Chapter Title
Typ
3.0
130
1.2
9500
1250
410
45
22
100
15
150
35
50
0.9
68
135
Max
1
±100
4.0
1.5
14250
1880
740
100
60
200
40
230
1.5
Unit
μA
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5 V, ID = 90 A
VGS = 10 V, ID = 90 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 20 V, ID = 90 A,
VGS = 10 V,
RG = 0 Ω
VDD = 32 V,
VGS = 10 V,
ID = 180 A
IF = 180 A, VGS = 0 V
IF = 180 A, VGS = 0 V,
di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0180EJ0100 Rev.1.00
Dec 17, 2010
Page 2 of 6









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NP180N04TUJ Даташит, Описание, Даташиты
NP180N04TUJ
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10000
1000
100
10
RD(VS(oGnS)
Limit
= 1i 0
ed
V)
ID(DC)
DC
ID(pulse)
PW = 1i 00 μs
1i 0 msi
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
400
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3°C/Wi
10
1 Rth(ch-C) = 0.43°C/Wi
0.1
0.01
Single Pulse
0.0011 m
10 m
100 m
1
10 100 1000
PW - Pulse Width - s
R07DS0180EJ0100 Rev.1.00
Dec 17, 2010
Page 3 of 6










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