Datasheet H5N2512FP-E0-E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	H5N2512FP-E0-E	250V - 18A - Field Effect Transistor H5N2512FP-E0-E 250V - 18A -  RDS(on) = 0.082     (ID = 9 A, VGS = 10 V, Ta = 25C) RENESAS : PRSS0003AG-A ( : TO-220FP) D 1 23 G S R07DS0861CJ0100 1.00 Oct 30, 2012 1. 2. 3. : 1. PW  10 s, 2. Tc = 25C 3. Tch  150C  1% VDSS VGSS ID ID (pulse) IDR IDR (pu	Renesas Technology	transistor

H5N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	H5N1503P	Silicon N Channel MOS FET High Speed Power Switching H5N1503P Silicon N Channel MOS FET High Speed Power Switching REJ03G0186-0100Z Rev.1.00 Mar.10.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta	Renesas Technology	data
2	H5N1506P	Silicon N Channel MOS FET High Speed Power Switching H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0200 Rev.2.00 Jul 03, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3	Renesas Technology	data
3	H5N2001LD	Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1	Renesas Technology	data
4	H5N2001LM	Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1	Renesas Technology	data
5	H5N2001LS	Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1	Renesas Technology	data
6	H5N2003P	Silicon N Channel MOS FET High Speed Power Switching H5N2003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0235-0100Z Rev.1.00 Apr.09.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta	Renesas Technology	data
7	H5N2004DL	Silicon N Channel MOS FET High Speed Power Switching H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching	Renesas Technology	data

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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