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FDP083N15A PDF даташит

Спецификация FDP083N15A изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel PowerTrench MOSFET».

Детали детали

Номер произв FDP083N15A
Описание N-Channel PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDP083N15A Даташит, Описание, Даташиты
April 2015
FDP083N15A
N-Channel PowerTrench® MOSFET
150 V, 117 A, 8.3 mΩ
Features
• RDS(on) = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge, QG = 64.5 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC (f > 1 Hz)
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP083N15A_F102
150
±20
±30
117
83
468
542
6
294
1.96
-55 to +175
300
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP083N15A_F102
0.51
62.5
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. 1.21
1
www.fairchildsemi.com









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FDP083N15A Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FDP083N15A_F102
Top Mark
FDP083N15A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 75 A
Dynamic Characteristics
Ciss
Coss
Crss
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 7 5V, VGS = 0 V,
f = 1 MHz
VDS = 120 V, ID = 75 A,
VGS = 10 V
f = 1 MHz
(Note 4)
Min.
150
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.08
-
-
-
-
6.85
139
4645
1445
100
4570
460
20
64.5
19.1
8.7
13.5
2.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 75 V, ID = 75 A,
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 75 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting TJ = 25°C, L = 3 mH, ISD = 19 A.
3. ISD 75 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
22
58
61
26
-
-
-
96
268
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
8.30 mΩ
-S
6040
1880
-
6040
1880
-
84
-
-
-
-
pF
pF
pF
pF
pF
pF
nC
nC
nC
nC
Ω
54 ns
126 ns
132 ns
62 ns
117 A
468 A
1.25 V
- ns
- nC
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. 1.21
2
www.fairchildsemi.com









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FDP083N15A Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
10
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
14
12
10
VGS = 10V
8
6 VGS = 20V
4 *Note: TC = 25oC
0 100 200 300 400
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
Ciss
Coss
1000
Crss
100
*Note:
1. VGS = 0V
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
2. f = 1MHz Crss = Cgd
50
0.1 1
10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
300
100
175oC
25oC
10
-55oC
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
1
23456
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
175oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 30V
8 VDS = 75V
VDS = 120V
6
4
2
0 *Note: ID = 75A
0 14 28 42 56 70
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. 1.21
3
www.fairchildsemi.com










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Номер в каталогеОписаниеПроизводители
FDP083N15AN-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor

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