NTNUS3171PZT5G PDF даташит
Спецификация NTNUS3171PZT5G изготовлена «ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET». |
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Детали детали
Номер произв | NTNUS3171PZT5G |
Описание | Small Signal MOSFET |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTNUS3171PZ
Small Signal MOSFET
−20 V, −200 mA, Single P−Channel,
1.0 x 0.6 mm SOT−1123 Package
Features
• Single P−Channel MOSFET
• Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm
Package
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
• This is a Pb−Free Device
Applications
• High Side Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
tv5s
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
TA = 25°C
PD
−20
±8
−150
−110
−200
−125
−200
V
V
mA
mW
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−600
−55 to
150
−200
260
mA
°C
mA
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
or 2 mm2, 1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
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V(BR)DSS
−20 V
RDS(ON) MAX
3.5 W @ −4.5 V
4.0 W @ −2.5 V
5.5 W @ −1.8 V
7.0 W @ −1.5 V
ID Max
−0.20 A
3
12
SOT−1123
CASE 524AA
MARKING
DIAGRAM
5M
5 = Specific Device Code
(Rotated 90° Clockwise)
M = Date Code
P−Channel
MOSFET
D3
G
1
S2
ORDERING INFORMATION
Device
Package
Shipping†
NTNUS3171PZT5G SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 1
1
Publication Order Number:
NTNUS3171PZ/D
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NTNUS3171PZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Junction−to−Ambient – Steady State (Note 3)
RqJA
1000
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
600
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu.
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = −250 mA
VGS = 0 V, VDS = −5.0 V TJ = 25°C
VGS = 0 V, VDS = −5.0 V TJ = 85°C
VGS = 0 V, VDS = −16 V TJ = 25°C
VDS = 0 V, VGS = ±5.0 V
Gate Threshold Voltage
Drain−to−Source On Resistance
VGS(TH)
RDS(ON)
Forward Transconductance
gFS
Source−Drain Diode Voltage
VSD
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = −250 mA
VGS = −4.5 V, ID = −100 mA
VGS = −2.5 V, ID = −50 mA
VGS = −1.8 V, ID = −20 mA
VGS = −1.5 V, ID = −10 mA
VGS = −1.2 V, ID = −1.0 mA
VDS = −5.0 V, ID = −125 mA
VGS = 0 V, IS = −200 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
f = 1 MHz, VGS = 0 V
VDS = −15 V
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = −4.5 V, VDD = −15 V,
ID = −200 mA, RG = 2.0 W
Fall Time
tf
4. Switching characteristics are independent of operating junction temperatures
Min Typ Max Unit
−20 V
−50
−100 nA
−200
±100 nA
−0.4 −0.7 −1.0
2.0 3.5
2.6 4.0
3.4 5.5
4.0 7.0
6.0
0.26
−0.5 −1.4
V
W
S
V
13
3.4 pF
1.6
30
56
ns
196
145
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2
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NTNUS3171PZ
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
0
TYPICAL CHARACTERISTICS
4.5 V
2.0 V
VGS = 2.2 thru 2.5 V
TJ = 25°C
1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
1234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
0.36
0.32 VDS ≥ 5 V
0.28
0.24
0.20
0.16
0.12
0.08
TJ = 125°C
0.04 TJ = 25°C
0
0 0.5
TJ = −55°C
1 1.5
2
2.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3
9.0
8.0 ID = 200 mA
TJ = 25°C
7.0
6.0
5.0
4.0
3.0
2.0 ID = 20 mA
1.0
1
23 4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate Voltage
5
1.75
ID = 200 mA
1.50 VGS = 4.5 V
1.25
3.5
TJ = 25°C
3
2.5
VGS = 2.5 V
2 VGS = 4.5 V
1.5
0.10 0.15 0.20 0.25 0.30 0.35
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
1000
TJ = 150°C
1.00
100
0.75 TJ = 125°C
0.50
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
10
0 5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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