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NTNUS3171PZT5G PDF даташит

Спецификация NTNUS3171PZT5G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET».

Детали детали

Номер произв NTNUS3171PZT5G
Описание Small Signal MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTNUS3171PZT5G Даташит, Описание, Даташиты
NTNUS3171PZ
Small Signal MOSFET
20 V, 200 mA, Single PChannel,
1.0 x 0.6 mm SOT1123 Package
Features
Single PChannel MOSFET
Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm
Package
1.5 V Gate Voltage Rating
Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
This is a PbFree Device
Applications
High Side Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
tv5s
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
TA = 25°C
PD
20
±8
150
110
200
125
200
V
V
mA
mW
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
600
55 to
150
200
260
mA
°C
mA
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using the minimum recommended pad size,
or 2 mm2, 1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
http://onsemi.com
V(BR)DSS
20 V
RDS(ON) MAX
3.5 W @ 4.5 V
4.0 W @ 2.5 V
5.5 W @ 1.8 V
7.0 W @ 1.5 V
ID Max
0.20 A
3
12
SOT1123
CASE 524AA
MARKING
DIAGRAM
5M
5 = Specific Device Code
(Rotated 90° Clockwise)
M = Date Code
PChannel
MOSFET
D3
G
1
S2
ORDERING INFORMATION
Device
Package
Shipping
NTNUS3171PZT5G SOT1123 8000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
October, 2010 Rev. 1
1
Publication Order Number:
NTNUS3171PZ/D









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NTNUS3171PZT5G Даташит, Описание, Даташиты
NTNUS3171PZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
JunctiontoAmbient – Steady State (Note 3)
RqJA
1000
JunctiontoAmbient – t = 5 s (Note 3)
RqJA
600
3. Surfacemounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu.
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, VDS = 5.0 V TJ = 25°C
VGS = 0 V, VDS = 5.0 V TJ = 85°C
VGS = 0 V, VDS = 16 V TJ = 25°C
VDS = 0 V, VGS = ±5.0 V
Gate Threshold Voltage
DraintoSource On Resistance
VGS(TH)
RDS(ON)
Forward Transconductance
gFS
SourceDrain Diode Voltage
VSD
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 100 mA
VGS = 2.5 V, ID = 50 mA
VGS = 1.8 V, ID = 20 mA
VGS = 1.5 V, ID = 10 mA
VGS = 1.2 V, ID = 1.0 mA
VDS = 5.0 V, ID = 125 mA
VGS = 0 V, IS = 200 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
f = 1 MHz, VGS = 0 V
VDS = 15 V
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDD = 15 V,
ID = 200 mA, RG = 2.0 W
Fall Time
tf
4. Switching characteristics are independent of operating junction temperatures
Min Typ Max Unit
20 V
50
100 nA
200
±100 nA
0.4 0.7 1.0
2.0 3.5
2.6 4.0
3.4 5.5
4.0 7.0
6.0
0.26
0.5 1.4
V
W
S
V
13
3.4 pF
1.6
30
56
ns
196
145
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NTNUS3171PZT5G Даташит, Описание, Даташиты
NTNUS3171PZ
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
0
TYPICAL CHARACTERISTICS
4.5 V
2.0 V
VGS = 2.2 thru 2.5 V
TJ = 25°C
1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
1234
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
5
0.36
0.32 VDS 5 V
0.28
0.24
0.20
0.16
0.12
0.08
TJ = 125°C
0.04 TJ = 25°C
0
0 0.5
TJ = 55°C
1 1.5
2
2.5
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3
9.0
8.0 ID = 200 mA
TJ = 25°C
7.0
6.0
5.0
4.0
3.0
2.0 ID = 20 mA
1.0
1
23 4
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. Gate Voltage
5
1.75
ID = 200 mA
1.50 VGS = 4.5 V
1.25
3.5
TJ = 25°C
3
2.5
VGS = 2.5 V
2 VGS = 4.5 V
1.5
0.10 0.15 0.20 0.25 0.30 0.35
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
1000
TJ = 150°C
1.00
100
0.75 TJ = 125°C
0.50
50 25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
10
0 5 10 15 20
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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NTNUS3171PZT5GSmall Signal MOSFETON Semiconductor
ON Semiconductor

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