5LP01SS PDF даташит
Спецификация 5LP01SS изготовлена «ON Semiconductor» и имеет функцию, называемую «P-Channel Small Signal MOSFET». |
|
Детали детали
Номер произв | 5LP01SS |
Описание | P-Channel Small Signal MOSFET |
Производители | ON Semiconductor |
логотип |
6 Pages
No Preview Available ! |
Ordering number : EN6622C
5LP01SS
P-Channel Small Signal MOSFET
–50V, –0.07A, 23Ω, Single SSFP
http://onsemi.com
Features
• Low ON-resistance
• Ultrahigh-speed switching
• 1.5V drive
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
--50
±10
--0.07
--0.28
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7029A-003
1.4
0.25 0.1
3
5LP01SS-TL-E
5LP01SS-TL-H
0 to 0.02
1
0.45
2
0.2
Ordering & Package Information
Device
Package
Shipping
5LP01SS-TL-E
SSFP
SC-81
8,000
pcs./reel
5LP01SS-TL-H
SSFP
SC-81
8,000
pcs./reel
Packing Type: TL
Marking
memo
Pb-Free
Pb-Free
and
Halogen Free
XB
TL
12
3
1 : Gate
2 : Source
3 : Drain
SSFP
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
72413 TKIM TC-00002971/O0312 TKIM/71206/42006PE MSIM TB-00002118/91400 TSIM TA-2042 No.6622-1/6
No Preview Available ! |
5LP01SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID= --1mA, VGS=0V
VDS= --50V, VGS=0V
VGS=±8V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --40mA
ID= --40mA, VGS= --4V
ID= --20mA, VGS= --2.5V
ID= --5mA, VGS= --1.5V
VDS= --10V, f=1MHz
See specified Test Circuit.
VDS= --10V, VGS= --10V, ID= --70mA
IS= --70mA, VGS=0V
Switching Time Test Circuit
VIN
0V
--4V
VIN
PW=10μs
D.C.≤1%
G
P.G 50Ω
VDD= --25V
ID= --40mA
RL=625Ω
D VOUT
5LP01SS
S
min
--50
Ratings
typ
--0.4
70
100
18
20
30
7.4
4.2
1.3
20
35
160
150
1.40
0.16
0.23
--0.85
max
--1
±10
--1.4
23
28
60
--1.2
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
--0.07
--0.06
--0.05
ID -- VDS
--2.5V
--2.0V
--0.04
--0.03
--0.02
VGS= --1.5V
--0.01
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Drain to Source Voltage, VDS -- V IT00090
--0.14
--0.12
ID -- VGS
VDS= --10V
--0.10
--0.08
--0.06
--0.04
--0.02
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate to Source Voltage, VGS -- V IT00091
No.6622-2/6
No Preview Available ! |
5LP01SS
RDS(on) -- VGS
40
Ta=25°C
35
30
100
7
5
RDS(on) -- ID
VGS= --4V
25
--20mA ID= --40mA
20
15
10
0
1000
7
5
3
2
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate to Source Voltage, VGS -- V
RDS(on) -- ID
IT00092
VGS= --2.5V
100
7
5
3
2
10
--0.01
40
Ta=75°C
--25°C
23
5 7 --0.1
Drain Current, ID -- A
RDS(on) -- Ta
25°C
23
IT00094
35
30
25
20
I
D=
-I-D20=m--A40, mVAG,SV=
--2.5V
GS= --4.0V
15
10
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00096
IS -- VSD
3
VGS=0V
2
--0.1
7
5
3
2
--0.01
--0.5
--0.6
--0.7 --0.8 --0.9 --1.0 --1.1
--1.2
Diode Forward Voltage, VSD -- V
IT00098
3
2
10
--0.01
100
7
5
3
2
Ta=75°C
25°C
--25°C
23
5 7 --0.1
Drain Current, ID -- A
RDS(on) -- ID
23
IT00093
VGS= --1.5V
Ta=75°C
25°C
--25°C
10
--0.001
1.0
7
5
3
2
0.1
7
5
3
2
0.01
--0.01
1000
7
5
3
2
100
7
5
3
2
10
--0.01
23
5 7 --0.01
Drain Current, ID -- A
⎪yfs⎪ -- ID
23
IT00095
VDS= --10V
Ta= --25°C
75°C
25°C
23
5 7 --0.1
Drain Current, ID -- A
SW Time -- ID
23
IT00097
VDD= --25V
VGS = --4V
tf
td(off)
tr
td(on)
23
5
Drain Current, ID -- A
7 --0.1
IT00099
No.6622-3/6
Скачать PDF:
[ 5LP01SS.PDF Даташит ]
Номер в каталоге | Описание | Производители |
5LP01S | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
5LP01S | P-Channel Small Signal MOSFET | ON Semiconductor |
5LP01SP | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
5LP01SS | P-Channel Small Signal MOSFET | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |