DataSheet26.com

C6000 PDF даташит

Спецификация C6000 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC6000».

Детали детали

Номер произв C6000
Описание NPN Transistor - 2SC6000
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

5 Pages
scroll

No Preview Available !

C6000 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6000
High Speed Switching Applications
DC-DC Converter Applications
2SC6000
Unit: mm
High DC current gain: hFE = 250 to 400 (IC = 2.5 A)
Low collector-emitter saturation: VCE (sat) = 0.18 V (max)
High speed switching: tf = 13 ns (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
120
120
50
6
7.0
10.0
0.5
20
150
55 to 150
V
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-13
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

C6000 Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
tr
tstg
tf
VCB = 120 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 mA
VCE = 2 V, IC = 2.5 A
IC = 2.5 A, IB = 83 mA
IC = 2.5 A, IB = 83 mA
See Figure 1 circuit diagram
VCC ∼− 20 V, RL = 8.0 Ω
IB1 = 83 mA, IB2 = −166 mA
Figure 1 Switching Time Test Circuit & Timing Chart
20μs
IB1
IB2
Duty cycle 1%
Input
IB1
IB2
VCC
Output
Marking
2SC6000
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
50 ― ―
V
160
250 400
― ― 0.18 V
― ― 1.10 V
45
450
ns
13
C6000
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-13
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

C6000 Даташит, Описание, Даташиты
8
50 30
6
IC – VCE
20
Common emitter
Tc = 25
4 10
25
IB = 2 mA
0
0
012345
Collector-emitter voltage VCE (V)
VCE (sat) – IC
1
Common emitter
IC/IB = 30
0.1
0.01
Tc = 100°C
25
55
0.001
0.001
0.01
0.1
1
Collector current IC (A)
10
2SC6000
10000
Common emitter
VCE = 2 V
hFE – IC
1000
100
Tc = 100°C
25
55
10
0.001
0.01
0.1
1
Collector current IC (A)
10
VBE (sat) – IC
10
Common emitter
IC/IB = 30
1 Tc = 55°C
100
25
0.1
0.001
0.01
0.1
1
Collector current IC (A)
10
2.0
Common emitter
VCE = 2 V
IC – VBE
1.5
1.0
Tc = 100°C 25 55
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
3
2006-11-13
Free Datasheet http://www.datasheet4u.com/










Скачать PDF:

[ C6000.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C6000NPN Transistor - 2SC6000Toshiba Semiconductor
Toshiba Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск