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Datasheet NVA4153N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NVA4153NSmall Signal MOSFET

NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage, 1.5 V Rated • ESD Protected Gate • NV Prefix for Automotive and Other Application
On Semiconductor
On Semiconductor
mosfet


NVA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NVA4001NSmall Signal MOSFET

NTA4001N, NVA4001N Small Signal MOSFET 20 V, 238 mA, Single, N−Channel, Gate ESD Protection, SC−75 Features • Low Gate Charge for Fast Switching • Small 1.6 x 1.6 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable − NVA4001N • These Devices are Pb−Free and
ON Semiconductor
ON Semiconductor
mosfet
2NVA4153NSmall Signal MOSFET

NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage, 1.5 V Rated • ESD Protected Gate • NV Prefix for Automotive and Other Application
On Semiconductor
On Semiconductor
mosfet
3NVATS4A104PZPower MOSFET, Transistor

NVATS4A104PZ Power MOSFET 30 V, 8.4 mΩ, 82 A, P-Channel The NVATS4A104PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistanc
ON Semiconductor
ON Semiconductor
mosfet
4NVATS5A106PLZPower MOSFET, Transistor

NVATS5A106PLZ Power MOSFET 40 V, 25 mΩ, 33 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Curren
ON Semiconductor
ON Semiconductor
mosfet
5NVATS5A107PLZPower MOSFET, Transistor

NVATS5A107PLZ Power MOSFET 40 V, 17 mΩ, 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Current
ON Semiconductor
ON Semiconductor
mosfet
6NVATS5A108PLZPower MOSFET, Transistor

NVATS5A108PLZ Power MOSFET 40 V, 10.4 mΩ, 77 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Curre
ON Semiconductor
ON Semiconductor
mosfet
7NVATS5A112PLZPower MOSFET, Transistor

NVATS5A112PLZ Power MOSFET 60 V, 43 mΩ, 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Current
ON Semiconductor
ON Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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