PDF NVE4153N Data sheet ( Hoja de datos )

Número de pieza	NVE4153N
Descripción	Small Signal MOSFET
Fabricantes	On Semiconductor
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No Preview Available ! NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage, 1.5 V Rated • ESD Protected Gate • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • Pb−Free Packages are Available Applications • Load/Power Switches • Power Supply Converter Circuits • Battery Management • Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady TA = 25°C State TA = 85°C Steady State VDSS VGS ID PD 20 V ±6.0 V 915 mA 660 300 mW Pulsed Drain Current tp =10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM TJ, TSTG IS TL 1.3 −55 to 150 280 260 A °C mA °C THERMAL RESISTANCE RATINGS Parameter Symbol Value Units Junction−to−Ambient − Steady State (Note 1) SC−75 / SOT−416 SC−89 RqJA °C/W 416 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). http://onsemi.com V(BR)DSS 20 V RDS(on) TYP 0.127 W @ 4.5 V 0.170 W @ 2.5 V 0.242 W @ 1.8 V 0.500 W @ 1.5 V ID MAX 915 mA 3 N−Channel MOSFET 12 MARKING DIAGRAM & PIN ASSIGNMENT 3 SC−75 / SOT−416 2 1 CASE 463 STYLE 5 3 Drain XX MG 3G SC−89 2 CASE 463C 1 2 1 Gate Source XX = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) Date Code orientation may vary depending upon manufacturing location. SC−75, SC−89 Gate 1 3 Drain Source 2 Top View ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 7 1 Publication Order Number: NTA4153N/D 1 page NTA4153N, NTE4153N, NVA4153N, NVE4153N PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE F b 3 PL 0.20 (0.008) M D −E− 2 3 1 e −D− HE 0.20 (0.008) E C A L A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS DIM MIN NOM MAX A 0.70 0.80 0.90 A1 0.00 0.05 0.10 b 0.15 0.20 0.30 C 0.10 0.15 0.25 D 1.55 1.60 1.65 E 0.70 0.80 0.90 e 1.00 BSC L 0.10 0.15 0.20 HE 1.50 1.60 1.70 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN INCHES MIN NOM MAX 0.027 0.031 0.035 0.000 0.002 0.004 0.006 0.008 0.012 0.004 0.006 0.010 0.059 0.063 0.067 0.027 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 SOLDERING FOOTPRINT 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 ǒ mm Ǔ inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 5 Page

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