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PDF NTLJF4156N Data sheet ( Hoja de datos )
| Número de pieza | NTLJF4156N | |
| Descripción | Power MOSFET and Schottky Diode | |
| Fabricantes | ON Semiconductor | |
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NTLJF4156N
Power MOSFET and
Schottky Diode
30 V, 4.6 A, mCool] N−Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm
WDFN Package
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• Co−Packaged MOSFET and Schottky For Easy Circuit Layout
• RDS(on) Rated at Low VGS(on) Levels, VGS = 1.5 V
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• Low VF Schottky
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players
• Color Display and Camera Flash Regulators
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
t≤5s
TJ = 25°C
TJ = 85°C
TJ = 25°C
TJ = 25°C
VDSS
VGS
ID
PD
30
±8.0
3.7
2.7
4.6
1.5
2.3
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TJ = 25°C
TJ = 85°C
TJ = 25°C
ID
PD
2.5 A
1.8
0.71
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
20
−55 to
150
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 2.4 A
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
1
http://onsemi.com
V(BR)DSS
30 V
MOSFET
RDS(on) MAX
70 mW @ 4.5 V
90 mW @ 2.5 V
125 mW @ 1.8 V
250 mW @ 1.5 V
ID MAX (Note 1)
4.6 A
VR MAX
30 V
SCHOTTKY DIODE
VF TYP
0.47 V
IF MAX
2.0 A
DA
G
SK
N−CHANNEL MOSFET SCHOTTKY DIODE
MARKING
DIAGRAM
1
WDFN6
CASE 506AN
16
2 JLMG 5
3G4
JL = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
A1
K
6K
N/C 2
D3
5G
D
4S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
NTLJF4156N/D
1 page  
NTLJF4156N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1000
VDS = VGS = 0 V
800
600
400
Crss
Ciss
TJ = 25°C
5
4
VDS
3
2 QGS
QGD
QT
18
15
VGS
12
9
6
200 Coss
0
50
5
VGS
VDS
1
0
10 15 20 25 30
0
ID = 2.0 A 3
TJ = 25°C
0
123 456
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 15 V
ID = 2.0 A
VGS = 4.5 V
100
10
td(off)
tf
tr
td(on)
3
VGS = 0 V
2
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
0
0.3 0.6 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
100
SINGLE PULSE
TC = 25°C
10 TJ = 150°C
See Note 2 on Page 1
10 ms
100 ms
1 1 ms
10 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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