NTLUS3A90PZ PDF даташит
Спецификация NTLUS3A90PZ изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTLUS3A90PZ |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTLUS3A90PZ
Power MOSFET
−20 V, −5.0 A, mCoolt Single P−Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving
• Lowest RDS(on) in 1.6x1.6 Package
• ESD Protected
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch
• PA Switch and Battery Switch
• Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−20
±8.0
−4.0
−2.9
−5.0
1.5
V
V
A
W
t ≤ 5 s TA = 25°C
2.3
Continuous Drain Steady
Current (Note 2)
State
TA = 25°C
TA = 85°C
ID
−2.6
−1.9
A
Power Dissipation (Note 2)
TA = 25°C
PD
0.6 W
Pulsed Drain Current
tp = 10 ms
IDM
−17 A
Operating Junction and Storage
Temperature
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
−0.84
A
Lead Temperature for Soldering Purposes TL 260 °C
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
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V(BR)DSS
−20 V
MOSFET
RDS(on) MAX
62 mW @ −4.5 V
95 mW @ −2.5 V
140 mW @ −1.8 V
230 mW @ −1.5 V
ID MAX
−5.0 A
S
G
D
P−Channel MOSFET
6 UDFN6
CASE 517AU
1 mCOOLt
MARKING
DIAGRAM
1
AD MG
G
AD = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 2
1
Publication Order Number:
NTLUS3A90PZ/D
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NTLUS3A90PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
RθJA
RθJA
RθJA
Max Units
84 °C/W
55
200
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 mA
ID = −250 mA, ref to 25°C
−20
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = −20 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = −250 mA
VGS = −4.5 V, ID = −4.0 A
VGS = −2.5 V, ID = −2.0 A
VGS = −1.8 V, ID = −1.2 A
VGS = −1.5 V, ID = −0.5 A
VDS = −10 V, ID = −3.0 A
−0.4
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
VGS = 0 V, f = 1 MHz,
VDS = −10 V
VGS = −4.5 V, VDS = −10 V;
ID = −3.0 A
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = −4.5 V, VDD = −10 V,
ID = −3.0 A, RG = 1 W
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −1.0 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dis/dt = 100 A/ms,
tb IS = −1.0 A
Reverse Recovery Charge
QRR
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Typ
−8.0
3.0
54
74
104
137
10
950
90
85
12.3
0.9
1.6
3.3
7.9
15.7
34.8
28.5
0.74
0.62
11.8
8.5
3.3
6.0
Max
−1.0
−10
±10
−1.0
62
95
140
230
1.2
Units
V
mV/°C
mA
mA
V
mV/°C
mW
S
pF
nC
ns
V
ns
nC
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NTLUS3A90PZ
TYPICAL CHARACTERISTICS
20
18
VGS = −4.5 V
−4.0 V
16 −3.5 V
−2.0 V
14 −3.0 V
12 −2.5 V
10
8 −1.8 V
6
4
2 −1.5 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
16
14 VDS ≤ −10 V
12
10
8
6
TJ = 25°C
4
2 TJ = 125°C
0 TJ = −55°C
0 0.5 1.0 1.5 2.0 2.5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.0
0.20
0.18
0.16
TJ = 25°C
ID = −4.0 A
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
−VGS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.180
0.140
−1.5 V
−1.8 V
0.100
TJ = 25°C
−2.5 V
0.060
VGS = −4.5 V
0.020
0 2 4 6 8 10 12 14 16 18 20
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
VGS = −4.5 V
ID = −4.0 A
1.4
1.3
10,000
TJ = 125°C
1.2
1000
1.1
1.0
0.9 TJ = 85°C
0.8
0.7
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
100
2 4 6 8 10 12 14 16 18 20
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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