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NVMS4816N PDF даташит

Спецификация NVMS4816N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVMS4816N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVMS4816N Даташит, Описание, Даташиты
NTMS4816N, NVMS4816N
Power MOSFET
30 V, 11 A, NChannel, SO8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AECQ101 Qualified and PPAP Capable NVMS4816N
These Devices are PbFree and are RoHS Compliant
Applications
Disk Drives
DCDC Converters
Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Steady
State
Power Dissipation
(Note 1)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
9.0
7.2
1.37
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 70°C
ID
6.8
5.4
Power Dissipation
(Note 2)
RqJA
TA = 25°C PD 0.78
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
Steady
State
TA = 25°C
TA = 70°C
ID
11
8.8
Power Dissipation
RqJA, t v 10 s(Note 1)
Steady
State
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 12.5 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
PD 2.04
IDM 33
TTsJtg,
55 to
150
IS 2.7
EAS 78
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
91.5 °C/W
JunctiontoAmbient – t v 10 s (Note 1)
RqJA
61.3
JunctiontoFoot (Drain)
RqJF
22.5
JunctiontoAmbient – Steady State (Note 2)
RqJA 159.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
30 V
RDS(ON) MAX
10 mW @ 10 V
16 mW @ 4.5 V
ID MAX
11 A
NChannel
D
G
S
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4816N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4816NR2G SO8 2500 / Tape & Reel
(PbFree)
NVMS4816NR2G SO8 2500 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 1
1
Publication Order Number:
NTMS4816N/D









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NVMS4816N Даташит, Описание, Даташиты
NTMS4816N, NVMS4816N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V, VDS = 24 V
TJ = 25°C
TJ = 100°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 7.2 A
VDS = 1.5 V, ID = 9 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 15 V, ID = 9 A
VGS = 10 V, VDS = 15 V, ID = 9 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V, IS = 2.7 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.7 A
Source Inductance
LS TA = 25°C
Drain Inductance
LD TA = 25°C
Gate Inductance
LG TA = 25°C
Gate Resistance
RG TA = 25°C
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
Typ Max Unit
V
26 mV/°C
1.0
10
±100
mA
nA
3.0 V
6.0 mV/°C
8.2 10 mW
12.7 16
26 S
1060
220
126
9.2
2.4
4.4
3.8
18.3
pF
nC
nC
8.0 ns
3.8
21.6
8.0
0.75 1.0 V
0.55
20 ns
9.0
11
9.0 nC
0.66 nH
0.20 nH
1.5 nH
1.5 2.3 W
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NVMS4816N Даташит, Описание, Даташиты
NTMS4816N, NVMS4816N
TYPICAL PERFORMANCE CURVES
20
10V
6V
5V
15 4.5 V
4.2 V
4V
10 3.8 V
TJ = 25°C
3.6 V
3.4 V
20
VDS 10 V
15
10
5 3.2 V
2.8 V 3.0 V
00 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
TJ = 100°C
5
TJ = 25°C
TJ = 55°C
01 2 3 4
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.050
0.045
0.040
TJ = 25°C
ID = 9 A
0.035
0.030
0.025
0.020
0.015
0.010
0.005 2
46
8
VGS, GATETOSOURCE VOLTAGE (VOLTS)
10
Figure 3. OnResistance vs. GatetoSource
Voltage
0.02
0.0175 TJ = 25°C
0.015
0.0125
VGS = 4.5 V
0.01
0.0075
0.005
0.0025
VGS = 10 V
05 10 15 20
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.6
1.5
ID = 9 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.650 25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
100000
10000
1000
150 1003
VGS = 0 V
TJ = 150°C
TJ = 100°C
6 9 12 15 18 21 24 27 30
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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