NVMS4816N PDF даташит
Спецификация NVMS4816N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVMS4816N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
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NTMS4816N, NVMS4816N
Power MOSFET
30 V, 11 A, N−Channel, SO−8
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• AEC−Q101 Qualified and PPAP Capable − NVMS4816N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Disk Drives
• DC−DC Converters
• Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Steady
State
Power Dissipation
(Note 1)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
9.0
7.2
1.37
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 70°C
ID
6.8
5.4
Power Dissipation
(Note 2)
RqJA
TA = 25°C PD 0.78
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
Steady
State
TA = 25°C
TA = 70°C
ID
11
8.8
Power Dissipation
RqJA, t v 10 s(Note 1)
Steady
State
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 12.5 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
PD 2.04
IDM 33
TTsJtg,
−55 to
150
IS 2.7
EAS 78
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
91.5 °C/W
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
61.3
Junction−to−Foot (Drain)
RqJF
22.5
Junction−to−Ambient – Steady State (Note 2)
RqJA 159.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
30 V
RDS(ON) MAX
10 mW @ 10 V
16 mW @ 4.5 V
ID MAX
11 A
N−Channel
D
G
S
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4816N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4816NR2G SO−8 2500 / Tape & Reel
(Pb−Free)
NVMS4816NR2G SO−8 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
1
Publication Order Number:
NTMS4816N/D
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NTMS4816N, NVMS4816N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V, VDS = 24 V
TJ = 25°C
TJ = 100°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 7.2 A
VDS = 1.5 V, ID = 9 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 15 V, ID = 9 A
VGS = 10 V, VDS = 15 V, ID = 9 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V, IS = 2.7 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.7 A
Source Inductance
LS TA = 25°C
Drain Inductance
LD TA = 25°C
Gate Inductance
LG TA = 25°C
Gate Resistance
RG TA = 25°C
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
Typ Max Unit
V
26 mV/°C
1.0
10
±100
mA
nA
3.0 V
6.0 mV/°C
8.2 10 mW
12.7 16
26 S
1060
220
126
9.2
2.4
4.4
3.8
18.3
pF
nC
nC
8.0 ns
3.8
21.6
8.0
0.75 1.0 V
0.55
20 ns
9.0
11
9.0 nC
0.66 nH
0.20 nH
1.5 nH
1.5 2.3 W
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NTMS4816N, NVMS4816N
TYPICAL PERFORMANCE CURVES
20
10V
6V
5V
15 4.5 V
4.2 V
4V
10 3.8 V
TJ = 25°C
3.6 V
3.4 V
20
VDS ≥ 10 V
15
10
5 3.2 V
2.8 V 3.0 V
00 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
TJ = 100°C
5
TJ = 25°C
TJ = −55°C
01 2 3 4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.050
0.045
0.040
TJ = 25°C
ID = 9 A
0.035
0.030
0.025
0.020
0.015
0.010
0.005 2
46
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.02
0.0175 TJ = 25°C
0.015
0.0125
VGS = 4.5 V
0.01
0.0075
0.005
0.0025
VGS = 10 V
05 10 15 20
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
ID = 9 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6−50 −25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100000
10000
1000
150 1003
VGS = 0 V
TJ = 150°C
TJ = 100°C
6 9 12 15 18 21 24 27 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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