NVGS3130N PDF даташит
Спецификация NVGS3130N изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVGS3130N |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTGS3130N, NVGS3130N
Power MOSFET
20 V, 5.6 A Single
N-Channel, TSOP-6
Features
• Leading Edge Trench Technology for Low On Resistance
• Low Gate Charge for Fast Switching
• Small Size (3 x 2.75 mm) TSOP−6 Package
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Lithium Ion Battery Applications
• Load/Power Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
VDSS 20 V
VGS ±8 V
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 10 s
Steady
State
t ≤ 10 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
ID
PD
5.6
4.1 A
6.2
1.1
W
1.4
Continuous Drain Current
(Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
4.2
3.0 A
0.6 W
Pulsed Drain Current
tP ≤ 10 s
Operating and Storage Temperature Range
IDM
TJ, Tstg
19
−55 to
150
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 1.0 A
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
110
Junction−to−Ambient − t ≤ 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
RqJA
90 °C/W
200
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
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V(BR)DSS
20 V
RDS(on) mAX
24 mW @ 4.5 V
32 mW @ 2.5 V
N−Channel
Drain 1 2 5 6
ID Max
5.6 A
4.9 A
Gate 3
Source 4
MARKING DIAGRAM &
PIN ASSIGNMENT
1
TSOP−6
CASE 318G
STYLE 1
Drain Drain Source
654
XX M G
G
123
Drain Drain Gate
XX = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 1
1
Publication Order Number:
NTGS3130N/D
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NTGS3130N, NVGS3130N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V; ID = 250 mA
Min Typ Max Unit
20
9.8
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V; VDS = 16 V,
TJ = 25°C
VDS = 0, VGS = ± 8 V
1.0 mA
100 nA
Gate Threshold Voltage
Negative Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCE, & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 5.6 A
VGS = 2.5 V, ID = 4.9 A
VDS = 10 V, ID = 5.6 A
0.4 0.6 1.4
V
3.4 mV/°C
19 24
25 32 mW
8.2 S
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 0 V,
f = 1 MHz,
VDS = 16 V
Vf =GS1
= 0 V,
MHz,
VDS = 10 V
VGS = 4.5 V
VDS = 16 V
ID = 5.6 A
VGS = 4.5 V
VDS = 5.0 V
ID = 6.2 A
VGS = 4.5 V,
VDD = 16 V,
ID = 1 A,
RG = 3 W
935
169
104
965
198
110
13.2 20.3
0.60
1.5
4.2
11.8 18.0
0.6
1.4
2.7
pF
nC
6.3 12.6
7.3 13.5
21.7 35.1
9.7 17.6
ns
Forward Diode Voltage
VSD
VISG=S
=0
1.0
V,
A
TJ = 25°C
0.7 1.2
V
Reverse Recovery Time
tRR
20.4
Charge Time
Discharge Time
ta
tb
VGS = 0 Vdc,
dISD/dt = 100 A/ms,
IS = 1.0 A
8.1 ns
11.6
Reverse Recovery Charge
QRR
8.8 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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NTGS3130N, NVGS3130N
TYPICAL CHARACTERISTICS
20
VGS = 4.5 V to 2.5 V
16 2.0 V
1.8 V
25
VDS ≥ 5 V
20
12 15
8
1.5 V
4
0 TJ = 25°C
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
10
5
0
0.5
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.75 1.0 1.25 1.5 1.75 2.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
2.25
0.10
0.08
ID = 5.6 A
0.06
0.04
0.02
TJ = 125°C
TJ = 25°C
0
1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.04
0.03
VGS = 2.5 V
0.02
VGS = 4.5 V
0.01
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
0.10
0.08
TJ = 25°C
0.06
VGS = 1.8 V
VGS = 2 V
0.04
VGS = 2.5 V
0.02
3 V VGS = 4.5 V
0.00 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1400
1200
1000
Ciss
VGS = 0 V
TJ = 25°C
f = 1 MHz
800
600
400 Coss
200
0 Crss
0 2 4 6 8 10 12 14 16 18 20
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Capacitance Variation
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