NTMC1300R2 PDF даташит
Спецификация NTMC1300R2 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMC1300R2 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
9 Pages
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NTMC1300R2
Power MOSFET
3 Amps, 30 Volts
Complementary SO−8 Dual
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Miniature SO−8 Surface Mount Package
Applications
• DC−DC Converters
• Power Management in Portable and Battery Powered Products, i.e.:
Computers, Printers, Cellular and Cordless Phones
• Low Voltage Motor Controls in Mass Storage Products, i.e.: Disk
Drives, Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous (Note 1)
N−Channel
P−Channel
VDSS
VGS
ID
30 V
±20 V
Adc
2.2
1.8
Drain Current − Continuous (Note 2)
N−Channel
P−Channel
ID Adc
2.8
2.3
Drain Current − Continuous (Note 3)
N−Channel
P−Channel
ID
Adc
3.6
3.0
Drain Current − Pulsed
N−Channel
P−Channel
IDM Apk
8.5
7.0
Total Power Dissipation @ TA = 25°C
(Note 3)
PD 2.0 W
Operating and Storage
Temperature Range
TJ, Tstg
−65 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc,
IL = 2.45 Apk, L = 25 mH, RG = 25 W)
Thermal Resistance
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Junction−to−Ambient (Note 3)
EAS
RqJA
75 mJ
178.5
106
62.5
°C/W
Maximum Lead Temperature for
Soldering Purposes for 10 Seconds
TL 260 °C
1. When surface mounted to an FR−4 board using minimum recommended pad
size, (Cu Area 0.412 in2), Steady State.
2. When surface mounted to an FR−4 board using 1″ pad size, (Cu Area
0.412 in2), Steady State.
3. When surface mounted to an FR−4 board using 1″ pad size, (Cu Area
0.412 in2), T ≤ 10 Seconds.
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3 AMPERES, 30 VOLTS
73 mW @ VGS = 10 V (Typ)
(N−Channel)
100 mW @ VGS = 10 V (Typ)
(P−Channel)
N−Channel
D1
P−Channel
D2
G1 G2
S1 S2
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 11
EC1300
LYWW
1
EC1300
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
(Top View)
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
NTMC1300R2
SO−8 2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number:
NTMC1300R2/D
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NTMC1300R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Polarity
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μA)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C)
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Notes 4 & 6)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
Static Drain−to−Source On−State Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(VDS = 20 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
RDS(on)
gFS
Ciss
Coss
Crss
−
(N)
(P)
−
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(on)
(N)
(P)
Rise Time
Turn−Off Delay Time
(VDD = 24 Vdc,
ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
tr
td(off)
(N)
(P)
(N)
(P)
Fall Time
tf (N)
(P)
Gate Charge
(VDS = 16 Vdc,
ID = 2.0 Adc,
VGS = 4.5 Vdc)
QT (N)
(P)
Qgs (N)
(P)
Qgd (N)
(P)
BODY−DRAIN DIODE RATINGS (Note 6)
Diode Forward On−Voltage
(IS = 1.7 Adc,
VGS = 0 Vdc)
Reverse Recovery Time
VSD (N)
(P)
trr (N)
(P)
(IS = 2.0 Adc,
VGS = 0 Vdc,
dIS/dt = 100 A/μs)
ta (N)
(P)
tb (N)
(P)
Reverse Recovery Stored
Charge
Qrr
4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Negative signs for P−Channel device omitted for clarity.
(N)
(P)
Min
30
−
−
−
1.0
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ Max Unit
− − Vdc
− 1.0 μAdc
− 1.0
− 100 nAdc
1.8
1.6
0.073
0.100
0.093
0.150
4.0
4.0
2.2
2.2
0.090
0.140
0.130
0.200
−
−
Vdc
W
W
mhos
190 300
325 550
75 150
110 175
30 60
40 75
pF
10 20
9.0 20
ns
7.0 15
11 20
20 35
25 40
5.0 15
13 25
3.0 5.0 nC
10 15
1.0 −
1.5 −
1.5 −
4.0 −
0.85
0.81
11
20
8.0
16
3.0
4.0
0.005
0.020
1.1
1.1
−
−
−
−
−
−
−
−
Vdc
ns
μC
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NTMC1300R2
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
12 4.6 V
4.8 V
9 5.2 V
6.5 V
8.0 V
6 10 V
TJ = 25°C
4.2 V
4.0 V
3.6 V
12 −10 V
9
6
P−Channel
−4.8 V
−5.2 V
−6.5 V
−8.0 V
TJ = 25°C
−4.6 V
−4.2 V
−4.0 V
−3.6 V
3.2 V
−3.2 V
33
VGS = 2.6 V
2.8 V
VGS = −2.6 V
−2.8 V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
0 1 2 3 4 5 6 7 8 9 10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. On−Region Characteristics
20
VDS ≥ 10 V
16
TJ = −55°C
TJ = 100°C
12 TJ = 25°C
8
20
VDS ≥ −10 V
16
12
TJ = −55°C
TJ = 25°C
TJ = 100°C
8
4
0
12 3 4 56 78
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
4
0
12 3 4 56 78
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.20
0.175
0.15
0.125
0.10
0.075
0.05
0.025
2
ID = 3.0 A
TJ = 25°C
3 4567 8 9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance versus
Gate−To−Source Voltage
0.25
0.225
0.20
ID = −3.0 A
TJ = 25°C
0.175
0.15
0.125
0.10
0.075
10 0.05 2 3 4 5 6 7 8 9 10
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. On−Resistance versus
Gate−To−Source Voltage
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